Nov 10, 2015 · Description of the device fabrication, temperature-dependent electroluminescence data for additional WSe 2 LED’s, low temperature photoluminescence of MoSe 2 LED’s, …

Aug 9, 2024 · Here, we demonstrate an atomically thin spin-LED device based on a heterostructure of a monolayer WSe2 and a few-layer antiferromagnetic CrI3, separated by a …

Mar 23, 2023 · The vertically assembled LED uses graphene/B nitride as top and bottom tunneling contacts and monolayer WSe2 as an active light emitter. By integrating a photonic …

Feb 22, 2022 · Here, we report a room-temperature waveguide-integrated light-emitting device based on a p-type monolayer (ML) tungsten diselenide (WSe 2) and n-type cadmium sulfide …

Mar 9, 2014 · Here, we demonstrate that combining monolayer WSe 2 with a p–n junction architecture using electrostatic doping produces efficient and electrically tunable excitonic light …

Jul 12, 2023 · The fabricated multi-gated WSe 2 devices obtain dynamic electrostatic field induced electrically configurable functions and demonstrate as diode with high rectification …

Sep 26, 2016 · We use a light-emitting diode (LED) realized by vertical stacking of LMs and achieve charge injection into the active layer containing quantum emitters. We show that …

(A) A monolayer WSe2 LED, which uses a split back gate configuration to electrostatically induce a p-n junction in the channel. Using BN as a gate dielectric helped to improve the quantum...

Jul 9, 2024 · Here, we demonstrate an atomically thin spin-LED device based on a heterostructure of a monolayer WSe2 and a few-layer antiferromagnetic CrI3, separated by a thin hBN …

Apr 22, 2024 · In this paper, we report an optoelectronic synaptic device based on Gr/WSe 2 vdWH that exhibits tunable optical potentiation and depression performance simply by …