Jan 30, 2018 · In this paper, the effects of silicon recess geometry and SiGe step height on SiGe epitaxy growth, SiGe facet formation and device performance in a SiGe process-induced strained silicon device are investigated.

Sep 2, 2002 · This application note describes how silicon germanium enhances IC performance in RF applications. A Giacoleto model is used to analyze noise effects. Wider gain bandwidth of SiGe technology is shown to provide lower noise performance. The impact of …

Epi Centura Demonstrates Excellent Control of Constant Ge Concentration Deposition and Linear Ge Grade for Strained Si Applications. Using High Temperatures Ensures High Growth Rates. Raman Spectroscopy Can Provide Information on Molecular Vibrations of Lattice. Tensile Stress in Strained Si is ~5 GPa (50,000 atm.).

Compressively strained Ge-rich alloys with high hole mobilities can also be grown on relaxed SiGe. We review progress in strained Si and dual channel heterostructures, and also introduce high hole mobility digital alloy heterostructures.

process to integrate Silicon-germanium (SiGe) stressors in PMOS transistors. The lattice mismatch induced by SiGe boosted hole mobility and drive current. As a device shrinks, a similar epi process that incorporates carbon in silicon is also used to apply strain engineering for NMOS devices. In some

Feb 15, 2008 · Locally strained Si technology using embedded SiGe has been used to improve pMOSFET device performance through hole mobility enhancement. Embedded SiGe is achieved by selectively growing epitaxial SiGe film in recessed Si pMOSFET source and drain areas.

Oct 15, 2006 · A selective SiGe epitaxial growth for strained CMOS Si technology was developed for 65 nm logic technology generation that integrates with Ni silicidation. A 36% device performance improvement for PMOS devices was achieved using this technology.

Sep 1, 2016 · The SiGe was selectively grown on Si-fins at 650 °C in an RPCVD reactor. In the growth process, the dichlorosilane (SiH 2 Cl 2), 10% germane (GeH 4) in H 2 and 1% diborane (B 2 H 6) in H 2 were used as the precursors of Si, Ge and B, respectively.

The MAX2044 single, high-linearity upconversion/down-conversion mixer provides +32.5dBm input IP3, 8.5dB noise figure, and 7.7dB conversion loss for 2300MHz to 4000MHz LTE, WiMAXK, and MMDS wireless infra-structure applications.

The SiGe:C hetero-structure bipolar transistor (HBT) has turned into a key technology for wireless communication. This paper describes the metrology tools for SiGe epitaxy process control. Two types of analysis are critical, (1) routine control of SiGe base and Si cap