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Resistive random-access memory - Wikipedia
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric …
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A 130.7mm2 2-layer 32Gb ReRAM memory device in 24nm …
Mar 28, 2013 · ReRAM has been considered as one of the potential technologies for the next-generation nonvolatile memory, given its fast access speed, high reliability, and mu
ReRAM: The Next-Gen Memory - Lumenci
Understanding Resistive Random-Access Memory …
Explore the future of memory tech with ReRAM: faster, energy-efficient, and scalable. Learn how Resistive Random-Access Memory is revolutionizing data storage.
Process integration of a 27nm, 16Gb Cu ReRAM - IEEE Xplore
Abstract: A 27nm 16Gb Cu based NV Re-RAM chip has been demonstrated. Novel process introduction to enable this technology include a Damascene Cell, Line-SAC Digit Lines filled …
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Resistive random access memory: introduction to device …
Mar 9, 2023 · Resistive random access memory (RRAM) is one of the most suitable emerging memory technologies candidates that have demonstrated potential to replace state-of-the-art …
ReRAM Memory Overview | CrossBar
CrossBar’s simple and scalable memory cell structure enables a new class of 3D ReRAM which can be incorporated into the back end of line of any standard CMOS manufacturing fab. CrossBar High-Density ReRAM technology can be …
Showtime for the Micron-Sony 16Gb ReRAM - EE Times
Mar 4, 2014 · The new 16Gbit ReRAM shown in Figure 3 is an impressive piece of design and a clear demonstration of lithographic and fabrication skills. With an array design that that might be serves as a vehicle that will allow other …
Conduction mechanisms, dynamics and stability in ReRAMs
Feb 5, 2018 · Though resistive random access memory (ReRAM), a promising emerging memory technology, has achieved remarkable progress in technology development in recent years, our …
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