The MGFK48G2732, GaN HEMT with an N-channel schottky gate, is designed for Ku-band applications with single-carrier operation. Tc. Vds. IDQ. Rg. Max. Δ f=5MHz(IM3) Keep safety first in your circuit designs!
The MGFK48G2732A, GaN HEMT with an N-channel schottky gate, is designed for Ku-band applications with multi-carrier operation. FEATURES.
MGFK48G2732A - Mitsubishi Electric US, Inc. | RF Transistor
The MGFK48G2732A from Mitsubishi Electric is a GaN High-Electron-Mobility Transistor (HEMT) that operates from 12.75 to 13.25 GHz. It delivers an output power of 70 W with a linear power gain of 11 dB and a power added efficiency (PAE) of 31%.
MGFK48G3745A - MITSUBISHI ELECTRIC US, Inc. Semiconductors …
GaN HEMT with an N-channel schottky gate designed for Ku-band applications with multi-carrier operation.
MGFK48G3745 - Mitsubishi Electric US, Inc. | RF Transistor
The MGFK48G3745 from Mitsubishi Electric US is a GaN HEMT that operates in the Ku-band from 13.75 to 14.5 GHz. It delivers an output power of 70 W with a linear power gain of 10 dB and a power-added efficiency of 33%. This HEMT has an N-channel Schottky gate and a 3rd-order intermodulation distortion of -25 dBc.
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TWO-TONE Characteristics VDS=24V, Idq=2.4A, Rg=10Ω, Δf=5MHz. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making …
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MGFK Datasheet, PDF - Alldatasheet
MGFK Datasheet, PDF : Search Partnumber : Start with "MGFK"-Total : 40 ( 1/2 Page) Manufacturer: Part # Datasheet: Description: Mitsubishi Electric Sem... MGFK25V4045 79Kb / 2P: 14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET MGFK25V4045 354Kb / 3P: 14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET
MGFK50G3745 - MITSUBISHI ELECTRIC US, Inc. Semiconductors …
GaN HEMT with an N-channel schottky gate designed for Ku-band applications.
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