In semiconductor manufacturing, a low-κ is a material with a small relative dielectric constant (κ, kappa) relative to silicon dioxide. Low-κ dielectric material implementation is one of several strategies used to allow continued scaling of microelectronic devices, colloquially referred to as extending Moore's law .

Low-k dielectric technology could be classified from the point of view of its readiness for infusion into flight systems according to the technology readiness level (TRL) classification. The low-k technology has been implemented in ASICs (IBM, Fujitsu), and microprocessors with low-k ILD are expected by the third quarter this year (PowerPC by IBM).

Jul 18, 2003 · This paper describes dicing of eight types of Spin-On and CVD low-k wafers. Effects of various blades and dicing process parameters, as well as their combined effect on quality and yield, are discussed.

Jan 1, 2004 · In principle, any material with a dielectric constant k lower than 4.2 is of interest (so called low-k dielectrics), but the k value is only one of many required properties. In this paper, we will briefly review ways of reducing k , survey the available low- k materials, and identify the problems associated with their integration in ...

Amongst the available low-k materials, Black diamond TM (BD, low-k, SiOC:H) has been considered as potential inter metal dielectric material for integration in ULSI (Ultra Large Scale Integration) due to its better electrical and dielectric properties.

The Low-k/ Ultra Low-k dielectric material is notorious for its low adhesion strength on silicon and weak bulk mechanical and fracture strength properties, imposing challenges to wafer manufacturing integration.

Mar 18, 2021 · Here, we report the fabrication of high-quality COF thin films, which enable thermoreflectance and impedance spectroscopy measurements. These measurements reveal that 2D COFs have high thermal...

The tight pitch BEOL definition is driven by low-power and small area designs that are optimized for number of die per wafer at minimal number of wiring levels.

LSI Logic believe that low-k dielectric is the performance driver for the BEOL interconnect, and is aggressively pursuing low-k material solutions that meets our technology requirements.

A low-k dielectric material is insulating in nature to exhibit weak polarization when subjected to externally applied electric fields for the generation of electric dipoles. It has a lesser dielectric constant in relation to the values of silicon dioxide.