75V Single N-Channel Power MOSFET in a TO-220 package. The StrongIRFET™ power MOSFET family is optimized for low R DS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.

Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C.

Part #: IRFB3207. Download. File Size: 385Kbytes. Page: 11 Pages. Description: HEXFET Power MOSFET. Manufacturer: International Rectifier.

Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature.

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IRFB3207 Infineon Technologies Transistors parts available at DigiKey.

IRFB3207 Transistor Datasheet, IRFB3207 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog.

Disipación de potencia (Máx.) IRFB3207 Infineon Technologies Transistores piezas están disponibles en DigiKey.