55V Single N-Channel Power MOSFET in a TO-220 package.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

View IRF3205 by Infineon Technologies datasheet for technical specifications, dimensions and more at DigiKey.

View datasheets for IRF3205 by Infineon Technologies and other related components here.

IRF3205STRLPBF – N-Channel 55 V 110A (Tc) 200W (Tc) Surface Mount D2PAK from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

Find the best pricing for International Rectifier IRF3205NS by comparing bulk discounts per 1,000. Octopart is the world’s source for International Rectifier IRF3205NS availability, pricing, and technical specs and other electronic parts

Oct 29, 2021 · In summary, using an IRF3205 MOSFET instead of a transistor can transform your electronic equipment operation effectively. The MOSFET is faster due to using a metal oxide despite the BJT transistor relying on the combination of the electric hole.

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Nov 19, 2024 · It is designed for high-performance, low-voltage applications, offering low on-resistance and fast switching capabilities. The device is available in a TO-220AB package, making it suitable for through-hole mounting on printed circuit boards (PCBs). The absolute maximum ratings specify the limits beyond which damage to the device may occur.