Apr 13, 2021 · (34) Local analysis by transmission electron microscopy (TEM) revealed a lateral size of the crystallites of around 10 nm and that grain boundaries were along {100} or {110} …

Jan 25, 2021 · Here, we demonstrate metastable o -FE phase and ferroelectricity at room temperature in bulk HfO 2:Y single crystals, which are grown using a state-of-the-art laser …

In this study, the method of low-temperature atomic layer deposition (ALD), which is applied on the soft photo-resist (PR) substrate forming hafnium dioxide (HfO2) at 40°C to 85°C, is …

ied on the soft photo-resist (PR) substrate forming hafnium dioxide ( fO2) at 40oC to 85oC, is reported for the first time. This reveals the potential application in the TEM sample preparation. …

TEM results were performed for 100 nm thick HfO 2 layers deposited at three temperatures of 85, 135, and 350 °C. SEM images were measured for HfO 2 layers thicker than 500 nm at …

Jul 15, 2022 · Phase transition of HfO 2 thin film has been investigated to demonstrate desirable electrical properties, such as high dielectric constant or ferroelectricity, however, the most of …

The physical and chemical properties of the HfO2/SiO2/Si stack have been analyzed using cross-section HR TEM, XPS, IR-spectroscopy and ellipsometry.

Since 2011, the ferroelectric field has been primarily focused on HfO 2 -based ferroelectric thin films owing to their exceptional scalability. Several reviews discussing the control of …

In this paper, we discuss the fabrication and characteristics of ferroelectric HfO2 film and various applications, including negative capacitance (NC)), Ferroelectric random-access memory …

Jul 31, 2008 · A transmission electron microscopy (TEM) methodology is developed and applied to quantify the ALD conformality in the nanopores (thickness as a function of depth), and the …