This paper covers the general TSV feature and techniques such as TSV architecture, TSV reliability, TSV open / short test, and TSV repair. And HBM DRAM, representative DRAM …

Jun 8, 2017 · Abstract: HBM (High Bandwidth Memory) is an emerging standard DRAM solution that can achieve breakthrough bandwidth of higher than 256GBps while reducing the power …

In this paper, through-silicon via (TSV) circuit models for the third generation of high bandwidth memory (HBM3) are developed utilizing 3D IC stacking technology with micro-bump or hybrid …

This paper proposes a fundamental architecture for the High Bandwidth Memory (HBM) with the bumpless TSV for the Wafer-on-Wafer (WOW) technology. The bumpless interconnects …

High-bandwidth memory (HBM) is the latest 3-D-stacked dynamic random access memory (DRAM) standard adopted in Joint Electron Device Engineering Council (JEDEC).

This paper presents a low-voltage area-efficient through-silicon via (TSV) I/O for the high-bandwidth memory utilizing overlapped multiplexing driver, ISI compensators (hybrid …

Mar 12, 2018 · High-bandwidth memory (HBM) DRAM, with TSV technology and wide IOs, is a prominent solution to this problem, but it still has many limitations: including power …

Recently we have fabricated a test vehicle with TSVs similar to a HBM DRAM footprint to build 4-die stacks to demonstrate stacking and TSV intergration with the technology. The die is 8mm …

The proposed TSV I/O satisfies the following requirements for implementing HBM I/O: a sufficient voltage margin of the transmitted signal, no static power consumption, and a small area …

Techniques such as an on-die ECC engine, internal NN-DFE I/O signaling, TSV auto-calibration, and layout optimization based on machine-learning algorithms are implemented to efficiently …