Nov 15, 2022 · In this paper, we have demonstrated a NO 2 gas sensor at RT((25 ± 3) ℃) and relative humidity (RH) of 34% RH based on GaN with micro-nanostructure using wet etching with molten KOH, so as to fabricate high quality and cost effective GaN-based sensor, namely p-type GaN hexagonal pits (GaN-HP) gas sensor.

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MBE growth of GaN NWs onto a 3-inch Si wafer. The p-type doped GaN nanowires were grown on Si substrate by Veeco Gen 930 plasma-assisted molecular beam epitaxy. The doping densities of p-type dopant in the p-GaN were controllably tuned by controlling the Mg cell temperatures.

Apr 1, 2020 · In summary, the n-MoS 2 /p-GaN heterostructure was successfully fabricated using a layer transferred process. The n-MoS 2 /p-GaN heterostructure exhibited significantly high NO x gas responses under reverse bias (−2 V) compared pristine p-GaN.

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Jan 14, 2015 · In this study, planar Pd/ZnO/GaN heterojunction diodes (HJDs) are fabricated and their capabilities for NO x (NO and NO 2) gas-sensing is evaluated.

Oct 25, 2023 · 目前获取nox浓度的主要有三种方法：(1)通过烟气排放连续监测系统对nox等气体进行监测，但价格较为昂贵，寿命短，nox浓度信号存在较大延迟。 (2)基于计算流体力学、化学机理，搭建相应的物理化学模型。