The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance.

The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

The AN/TPS-80 Ground/Air Task Oriented Radar (G/ATOR) is the United States Marine Corps next-generation Air Surveillance/Air Defense and Air Traffic Control (ATC) Radar. The mobile active electronically scanned array radar system is being developed by Northrop Grumman and was expected to reach initial operating capability in August 2016.

Discover the EPC2206 Automotive 80 V, 390 A Enhancement-Mode GaN Power Transistor – perfect for 48 V power distribution systems, DC-DC converters, and more.

The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior

Targeted at high-voltage / high-power applications, Nexperia cascode GaN FETs provide exceptionally high switching frequency capability for 650 V applications and the robust low on-resistance particularly suited for automotive electrification.

The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

Whether for low- or high-power conversion applications, power Gallium Nitride FETs (GaN FETs) are increasingly making their way into mainstream markets. For a variety of high-voltage and low-voltage applications GaN FETs deliver the fastest transition/ switching capability (highest dv/dt and di/dt), and best power efficiency.

Jan 21, 2025 · Using GaN FETs in 80 plus titanium power supply units. Industrial power supply units come in different shapes and sizes, but one commonality is the need to be safe and efficient. To ensure maximum efficiency is met designers are looking to power GaN FETs.

Apr 27, 2021 · Nexperia’s GaN FETs help PSU manufacturers drive up Titanium PSU efficiency and power density while also making them more cost-effective. The first element is better switching performance, due to a lower Qrr and fast current voltage transitions that reduces switching losses and boosts overall system efficiency.