A major breakthrough: 1200V E-Mode GaN HEMTs - GaNPower
Aug 2, 2018 · GaNPower International Inc. (GPI) is proud to announce a major technological breakthrough in gallium nitride (GaN) power electronics. GPI has succeeded in the design and tapeout of its first commercial E-mode GaN high mobility transistor (HEMT) rated at 1200V breakdown voltage.
GaNPower Demonstrates Industry’s First 1200 V Single-Die E-Mode GaN …
New 1200V GaNFET Power Switching Capability Demonstrated at 800V. Sept., 2021— GaN Power International, an industry leader in gallium nitride (GaN) device technology and GaN based power electronics systems, has achieved an important milestone in the development of high-voltage GaN power devices.
1200V GaNFET in DFN8x8 Package - GaNPower
GaNPower International Inc. is pleased to announce the release of 1200V EMODE single-die GaNFET in its first DFN8x8 format at the engineering sampling stage. The new product (code GPIHV30DFN) features low Qg*Rds at 65mOhm turn-on resistance.
Simulation Model of Industry's First 1200 V GaN-on-Sapphire …
May 8, 2023 · GOLETA, Calif. — Transphorm, Inc. (Nasdaq: TGAN)—global leader in fundamentally superior, quantitatively outperforming GaN power semiconductors—today announced availability of its 1200 V FET simulation model and preliminary datasheet.
Demonstrated GaN module shows a great potential for applications in the voltage range of 900 and 1200V Future work is planned to complete measurements at higher power level up to 20 kW and optimize module for high frequency >300kHz and increase current and…
1200 V GaN-on-Si Junction Barrier Schottky (JBS) Diodes by an E …
Here we report GaN-on-Si JBS diodes based on an e-mode-compatible process. Thanks to a judicious design of p-GaN islands in the anode, the JBS diode presents enhanced breakdown voltage (VBR) of −1267 ± 23 V with diminished reverse current (IR) of …
GaN power electronics - Fraunhofer IAF - Fraunhofer Institute for ...
Lateral and vertical 1200 V GaN devices. 1200 V devices are an essential development in the field of electromobility and in electric drive, charging and transmission technology.
Transphorm Releases Industry’s First 1200V Sapphire-Based GaN …
May 21, 2024 · Transphorm, a global leader in GaN (gallium nitride) power semiconductors, recently released the industry’s first 1200V sapphire-based GaN device simulation model and preliminary datasheet. The TP120H070WS FET is currently the only 1200V sapphire-based GaN power semiconductor available.
World's first 700V and 1200V vertical GaN devices in production
Feb 2, 2023 · NexGen Power Systems has started shipping engineering samples of the first 700V and 1200V vertical GaN devices for high power applications. The 1200V Vertical GaN e-mode Fin-jFETs are the only wide-band-gap devices to have successfully demonstrated high frequency switching at a 1.4kV rated voltage.
1200V E-mode GaN Monolithic Integration Platform on ... - IEEE …
1200V E-mode GaN Monolithic Integration Platform on Sapphire with Ultra-thin Buffer Technology Abstract: This paper firstly reported the 1200V enhancement-mode (E-mode) Gallium Nitride (GaN) based monolithic halfbridge (HB) integration …