Sep 12, 2024 · In this Perspective, we present the status and challenges for manufacturing GaN and SiC membranes based on remote epitaxy technology that offers significant advantages via wafer reuse and...

In this Perspective, we present the status and challenges for manufacturing GaN and SiC membranes based on remote epitaxy technology that ofers significant advantages via wafer reuse and...

Oct 19, 2024 · In 2012, Kim et al. demonstrated the fabrication of WBG/2D heterostructure by growing GaN on an EG/SiC substrate, utilizing quasi-vdW epitaxy (Figure 7b), where the term “quasi” is employed to denote that the grown materials are thin films rather than layered materials.

We perform thin-film growth and characterization of homoepitaxial and heteroepitaxial layers of WBG and UWBG semiconductors for applications in electronic devices that can operate at extreme conditions. Growth methods include molecular beam epitaxy and pulsed laser deposition.

Apr 8, 2024 · On-going efforts within ECE include epitaxial and bulk material synthesis by metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and hydride vapor phase epitaxy (HVPE); novel device design and fabrication; and exploration of WBG and UWBG semiconductors for new applications in fields of photonics, electronics, energy ...

Here we report probing of boron vacancy (VB)-related defects in freestanding h-BN semi-bulk wafers synthesized by hydride vapor phase epitaxy (HVPE). A photocurrent excitation spectroscopy (PES) was designed to monitor the transport of …

Jun 1, 2024 · Low-temperature epitaxy: 90% less energy consumption, 100% less toxic gases. In the “GREEN EPITAXY” research project, Fraunhofer IPT and its project partners are developing an innovative process chain for the production of WBG semiconductors.

Jun 21, 2023 · In the semiconductor field, epitaxy growth is a highly controllable method for precisely assembling crystalline structures onto a substrate with suitable crystal orientation and matched lattice. This knowledge thus leverages our opportunity to realize blocking structure in mixed-halide WBG perovskites via material designing and film processing.

Description of the GaN power industrial landscape, from epitaxy and device design to device processing.

CVD epitaxy reactors Epiluvac ER3 (NEW!) Optimized for highest possible yield by excellent uniformity and minimal number of defects. Ready for 200 mm SiC and GaN Quartz-free and ready for chlorinated processes Automatic hot-wafer loading/unloading Hot-wall CVD Optional cluster configuration and cassette-to-cassette automation