EUV lithography makes scaling more affordable for chipmakers and allows the semiconductor industry to continue its pursuit of Moore’s Law. EUV systems are used to print the most intricate layers on a chip, with the rest of the layers printed using various DUV systems.

Advance EUV patterning on the ASML NXE:3300/ CLEAN TRACKTM LITHIUS ProTM Z- EUV litho cluster is launched at imec, allowing for finer pitch patterns for L/S and CH. Tokyo Electron Limited (TELTM) and imec are continuously collaborating to develop manufacturing quality POR processes for EUV.

EUV mirror tilts must be controlled with sub-nrad accuracy to enable sub-nm image placement Test module for EUV mirror positioning The final result: ZEISS Starlith ® 3300 optics delivers excellent imaging

Pupil shapes with smaller PFR can be supported on the Starlith® 3300 illuminator, by switching off pupil channels, reducing the illuminator efficiency. .... benefit of reduced 20% pupil fill ratio for ILS and MEEF. Process window of freeform pupil is maintained by EUV pupil.

Optics for EUV Lithography have evolved over three decades to a level where excellent imaging is demonstrated. Right now, the Starlith® 3400 Optics extends EUV Lithography to 13nm single-shot resolution with high productivity for serial production.

Shipping in 2013, the NXE:3300 is the second generation of ASML’s EUV exposure platform. We review the current status of EUV optics production for the NXE:3300 tools. Four customer systems of the Starlith TM 3300 series have been delivered so far.

Shipping in 2013, the NXE:3300 is the second generation of ASML’s EUV exposure platform. We review the current status of EUV optics production for the NXE:3300 tools. Four customer systems of...

Apr 17, 2014 · The first NXE3300B systems have been qualified and shipped to customers. The NXE:3300B is ASML’s third generation EUV system and has an NA of 0.33. It succeeds the NXE:3100 system (NA of 0.25), which has allowed customers to gain valuable EUV experience.

NXE:3300 – first mirrors in flare specification [year] First results on 3300 mirrors well below the 6% flare Specification – Flare level 4% (below a 2μm line) for customer optics

Standard EUV coatings are not able to reflect the combination of large angles and large angular spread needed for high-NA. . . Anamorphic design. Limits incident angles on mask, enables high contrast. Obscuration. Limits incident angles on mirrors, enables higher tranmission.