Dynamic random-access memory (DRAM) cells consist of a capacitor and transistor. Electrical charge is either stored or released from circular capacitors, controlled by the transistor. For economical motivations, the capacitors are packed in dense arrays to reduce DRAM surface area.

Recent advancements of high resolution electron tomography in the materials science field has demonstrated that it will be a promising technique to overcome the 3D effect described [1,2]. The sample was prepared using focused ion beam. The imaging mode was Z-contrast HAADF STEM with a probe size of 0.5nm.

Apr 19, 2024 · Dynamic random access memory (DRAM) plays a crucial role in computing devices, providing fast access to essential data and allowing them to operate at peak performance. For DRAM manufacturers, scaling is important as it enables lower cost per unit area by enabling reductions in DRAM cell size.

DDR5 (Double Data Rate 5) Synchronous DRAM capacitors were observed and analyzed using plane view STEM technique. Annular capacitors consit of more than 5 layers of several nm thickness each.

In order to improve DRAM retention time characteristics, leakage current must be reduced and various solutions are proposed. The major leakage paths in a DRAM cell stem from reverse junction leakage from the storage node, and gate induced drain leakage (GIDL) current.

We present a study on the interfacial diffusion and distribution of high-k material within DRAM capacitors during STEM-EDS data collection. You'll also discover the effect of the electron beam and its impact on metrology characterization.

A plan view TEM lamella of DRAM capacitors was prepared using FIB-SEM. Ordered arrangement of circular capacitors and their concentric multilayer (several nm thick each) were …

Apr 9, 2024 · With continuous DRAM device scaling, critical dimension measurements and elemental analysis of capacitor structures becomes more critical. Here, we present an automated TEM metrology and EDS characterization workflow for plan view DRAM capacitors.

DRAM Refresh Capacitors leak and lose charge Need periodic restoration of charge JEDEC Spec: At normal temp, cell retention time limit is 64ms. At high (extended) temp, retention time halves to 32ms. The memory controller issues refresh operations periodically. Assume 4GB DRAM with 2KB pages, organized as 16 banks 2M pages total, 128K pages per ...

Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology.