Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology.

Dreamgate is an Ability in Hollow Knight. It allows the Knight to place a warp point and then travel to it. Allows the Knight to place a Dreamgate at a location, then warp to it from anywhere. Only one Dreamgate can be placed at any time, and placing a …

Feb 18, 2016 · The optimized DRAM high-k/metal gate peripheral transistors showed current gains of 65%/55% and DIBL improvements of 52%/46% for nMOSFET and pMOSFET, respectively.

Jul 6, 2011 · The Versa XLR (extremely low resistance) Tungsten PVD (physical vapor deposition) tool attacks gate electrode resistance and parasitic capacitance. The DPN HD (decoupled plasma nitridation, high-dose) tool increases k in the gate dielectric, allowing better switching speed and leakage control.

A DRAM cell consists of a capacitor connected by a pass transistor to the column line (or bit line or digit line). The column line (or digit line) is connected to a multitude of cells arranged in a column.

Feb 27, 2025 · Discover how a dual work-function metal gate (DWMG) structure in DRAM buried word-line (BWL) reduces gate-induced drain leakage (GIDL) while maintaining performance. This innovation is crucial for advancing high-density, low-power DRAM technology.

DRAM은 subthreshold current와 같은 leakage current (누설전류)로 인해 주기적으로 capacitor의 방전되어가는 전하를 보상해주는 과정인 refresh 가 필요합니다. DRAM의 data 보존 능력을 retention 이라고 부르며 DRAM 전체 cell의 99% 이상이 retention time이 1초가 넘지만 몇 몇 cell들은 최소 시간인 64ms도 유지하지 못합니다. WL을 ON해서 해당 row의 모든 트랜지스터의 gate에 전압을 인가합니다. 특정 BL에 전압을 인가합니다. 이때 1 을 쓰고싶다면. V ss = 0V 를 인가합니다.

Aug 1, 2014 · In this paper, a low-cost and low-leakage gate-first high- (k) metal-gate CMOS integration compatible with the high thermal budget used in a 2× node dynamic random access memory process flow is...

Abstract: A 35nm node 4Gbit LPDDR3 prototype with high-k metal gate (HKMG) peripheral transistors is implemented for the first time using processes that are fully compatible with those of conventional commercial DRAMs with poly/SiON (PSiON) transistors. This paper describes that the HKMG transistors in the peripheral circuits drastically reduce ...

Aug 30, 2024 · Hold the Dream Nail tight, wielder, and imagine a great gate opening before you! Dreamgate is an Ability in Hollow Knight. It allows the Knight to place a warp point and then travel to it. Allows the Knight to place a Dreamgate at a location, then warp to it from anywhere.