Back end of the line or back end of line (BEOL) is a process in semiconductor device fabrication that consists of depositing metal interconnect layers onto a wafer already patterned with devices. It is the second part of IC fabrication, after front end of line (FEOL).

Jul 2, 2024 · They divide the semiconductor manufacturing process into three stages: the front end of the line (FEOL), the middle end of the line (MEOL), and the back end of the line (BEOL). Understanding these stages is crucial to grasping how tiny …

Jun 20, 2024 · The backend-of-the-line (BEOL) is second major stage of the semiconductor manufacturing process where the interconnects are formed within a device. Interconnects, the tiny wiring schemes in devices, are becoming more compact at each node, causing a resistance-capacitance (RC) delay in chips.

Sep 4, 2023 · BEOL, or Back-End-of-Line, refers to processes that follow the formation of source/drain regions in semiconductor fabrication. BEOL is responsible for interconnecting transistors using multiple layers of dielectric materials and metals.

Nov 7, 2022 · In this article we will discuss about FEOL, MEOL, and BEOL. We will do a small recap of semiconductor fabrication process. Basic Process Steps in CMOS Fabrication:

Apr 25, 2022 · As we approach the 1.5nm node and beyond, new BEOL device integration challenges will be presented. These challenges include the need for smaller metal pitches, along with support for new process flows. Process modifications to improve RC performance, reduce edge placement error, and enable challenging manufacturing processes will all be required.

Feb 8, 2020 · Interconnects – the tiny wiring schemes in chips’ back-end-of-line (BEOL) – distribute clock and other signals, provide power and ground for various electronic system components, and interconnect the transistors within the chips’ front-end-of-line (FEOL).

The current BEOL flow. Cu-based dual damascene has been the workhorse process flow for interconnects since its introduction in the mid 1990s. A simple dual damascene flow starts with the deposition of a low-k dielectric material on a structure. These low-k films are designed to reduce the capacitance and the delay in the ICs.

Mar 14, 2022 · To address these challenges, we investigated the possibility of using a semi-damascene approach with self-aligned patterning for BEOL at the 1.5nm node. A new BEOL device integration mask set was produced at imec for electrical evaluation of single damascene and dual damascene modules.

Jun 15, 2017 · Companies that do make the move to 16nm/14nm and beyond will encounter several new and expensive process steps at the front-end-of-the-line (FEOL), MOL, and backend-of-the-line (BEOL). Transistors are manufactured in the FEOL in a fab. Contacts and interconnects are made in the BEOL in the fab.