
Graphene-All-Around Cobalt Interconnect with a Back-End-of …
The graphene-all-around (GAA) structure has been verified to grow directly at 380 °C using hot-wire chemical vapor deposition, within the thermal budget of the back end of the line (BEOL).
Electroless Cobalt Via Pre-Fill Process for Advanced BEOL …
The scalability potential of low resistivity ternary metallic alloys (MAX) as an interconnect medium has been benchmarked against copper through first-principle simulations. We report that some carbon and nitrogen MAX phases have the potential to display a reduced sensitivity of their intrinsic resistivity to scaling, while showing improved electromigration properties.
Metal-on-metal area-selective deposition-Why cobalt succeeded …
Jan 13, 2022 · Currently, ASD is in production in high volume manufacturing for Co capping of Cu interconnects. Interestingly, it was also attempted to implement ASD several decades ago for back-end-of-line (BEOL) gapfill using chemical vapor deposition (CVD) of W.
BEOL Cu Gap-fill Performance Improvement for 14nm Technology …
Jun 26, 2020 · This paper analyze cobalt property and present how Cu seed thickness (THK), Deposition combine Etch (DCE) ratio, AC bias power impact on defect and top opening of trench.
Analysis Of BEOL Metal Schemes By Process Modeling
Nov 16, 2023 · Benchmarking the performance of ruthenium, cobalt, and copper in a damascene vehicle with varying critical dimensions.
Feb 23, 2017 · BEOL — How Important Are Resistance and Capacitance? Capacitance (C) can be reduced by lowering the dielectric constant (k) of the material, but at a cost!
Cobalt advanced barrier metallization: A resistivity composition ...
Apr 2, 2015 · Cobalt is a high-potential material applicable as liner and seed replacement in BEoL metallization schemes. To enable seedless plating, the resistivity of thin cobalt liners (<5 nm) has to be controlled.
(Invited) Cobalt Interconnects at 36nm Beol Pitch and Beyond: …
May 1, 2019 · Cobalt metallization in the back-end-of-line (BEOL) presents several interesting opportunities and challenges 1-5. In this work, we evaluate the performance of Co interconnects at narrow BEOL pitch using chemical vapor deposition (CVD) for Co and a Ta-based barrier layer.
Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: …
Feb 18, 2016 · Through-Co self-forming-barrier (tCoSFB) metallization scheme is introduced, with Cu gap-fill capability down to 7 nm-node dimensions. Mn atoms from doped-seedl.
Apr 1, 2019 · BEOL PRE-METALLIZATION CLEAN: INTRODUCTION MATERIAL LOSS PREVENTION DURING WET CLEAN: EFFECT OF HF PRE-TREATMENT ON GALVANIC CORROSION