Sep 7, 2020 · To solve the above issues, this paper proposes AlN MEMS filters with extremely high bandwidth widening capabilities. The wideband filters utilize AlN Lamb wave resonators in conjunction with...

After presenting the possible MEMS-CMOS integration strategies, recent demonstrations of AlN-based devices are reviewed, namely energy harvesters, film bulk acoustic resonators (FBAR), contour mode resonators (CMR), gas sensors, imagers, microphones, transducers for chip-scale communication and calorimetric sensors.

Sep 1, 2018 · Aluminum nitride (AlN) thin films are widely investigated due to their unique physical properties and applications in energy harvesting devices, ultrasonic transducers, microelectronics, high-frequency wide band communications, and power semiconductor devices.

AlN MEMS first-order and second-order wideband filters. It begins with the introduction of the AlN S0 Lamb wave resonator, followed by the implementation of the two wideband filtering topologies.

This paper reports a novel design on the notched supports coupled to the end of tethers to enhance the quality factor (Q factor) of the Lamb wave Aluminum Nitride (AlN) micro-electro-mechanical systems (MEMS) resonators. The anchor …

This chapter presents a method of integrating a specific class of integrated aluminum nitride (AlN) micro electro‐mechanical systems (MEMS) resonators and filters with complementary metal oxide semiconductor (CMOS) circuits using flip‐chip bonding.

PVD for MEMS. SMR-based piezoelectric AlN stackAlN volume production experience with both 150mm and 200mm wafers. The Sigma ® fxP is designed for flexibility and extendibility, meeting the diverse and evolving range of requirements for MEMS manufacturing.

Aug 1, 2022 · Multiple AlN-based MEMS resonator designs are created and exposed the devices to 1 Mrad(Si) gamma irradiation from a Cobalt-60 source while measuring scattering (S-) parameters in situ.

Apr 23, 2021 · This chapter presents a method of integrating a specific class of integrated aluminum nitride (AlN) micro electro-mechanical systems (MEMS) resonators and filters with complementary metal oxide semiconductor (CMOS) circuits using flip-chip bonding.

Nitride (AlN) piezoelectric MEMS resonator using phase change material (PCM) based switchable electrodes. For the first time, 12 miniaturized (2 µm×2 µm) PCM switches are monolithically integrated with an AlN MEMS resonator and used to reconfigure the terminal connections of the individual metal fingers composing the device interdigital