
SK hynix developing 3D DRAM it calls 4F2 DRAM: joins South …
Aug 13, 2024 · SK hynix announces it plans to develop 4F2 (square) DRAM, joining South Korean rival Samsung with vertically stacked DRAM tech for AI chips of the future.
Samsung teases 16-layer 3D DRAM with VCT DRAM as a …
May 28, 2024 · The 4F2 VCT is an interim, short-term proposed solution, where Samsung also indicated the possible use of the oxide semiconductor channel, just as in IME's 2T0C …
Highly scalable 4F2 cell transistor for future DRAM technology
A novel 4F 2 dynamic random access memory (DRAM) cell transistor structure was proposed that can solve various process problems and special failure modes that caused by floating body. …
SK hynix says its 3D DRAM is half as expensive to produce - Tom's Hardware
Aug 16, 2024 · SK hynix says adopting 4F2 structures and 3D transistors will increase the cost-efficiency of EUV lithography usage in DRAM production.
Oxide-Semiconductor Channel Transistor DRAM (OCTRAM) with 4F2 …
A 275Mbit OCTRAM array was fabricated with WL 54nm/BL 63nm pitches and showed successful DRAM operation in the designed voltage range, making it a breakthrough technology for future …
Kioxia Develops OCTRAM (Oxide-Semiconductor Channel Transistor DRAM …
Dec 10, 2024 · Kioxia Corporation, a world leader in memory solutions, today announced the development of OCTRAM (Oxide-Semiconductor Channel Transistor DRAM), a new type of …
4F² DRAM developed by a Kioxia using ALD IGZO
Oct 27, 2024 · The new 4F² DRAM developed by a Kioxia-led team combines gate-all-around (GAA) IGZO (indium-gallium-zinc oxide) vertical channel transistors (VCTs) with a unique …
Vertical Channel Transistor (VCT) as Access Transistor for Future 4F2 ...
Abstract: In this work, a novel 4F 2 VCT (vertical channel transistor) targeting for next generation of DRAM is proposed. We approached process feasibility and device performance of 4 F 2 …
[News] SK hynix Plans to develop 4F2 DRAM to ... - TrendForce …
Aug 14, 2024 · SK hynix, according to a report by The Elec, is said to develop a 4F2 (square) DRAM in order to reduce the high cost associated with the extreme ultraviolet (EUV) …
Samsung’s 3x DDR3 SDRAM – 4F2 or 6F2? You Be the Judge..
Jan 31, 2011 · We recently acquired Samsung’s latest DDR3 SDRAM, allegedly a 3x-nm part. When we did a little research, we found that the package markings K4B2G0846D-HCH9 lined …