Jul 12, 2023 · The fabricated multi-gated WSe 2 devices obtain dynamic electrostatic field induced electrically configurable functions and demonstrate as diode with high rectification …

Mar 21, 2025 · With AACVD, we achieve 2-inch monolayer and centimeter-scale bilayer WSe 2 films with defect densities as low as 1.6 × 10 12 cm −2 (monolayer) and 1.8 × 10 12 cm −2 …

Mar 1, 2018 · Physically, in WSe2 the Zeeman field opens different spin-dependent band gaps at the K and K ′ valleys, which in turn induce spin- and valley-polarized transport. Therefore, the …

Feb 27, 2023 · This paper provides comprehensive experimental analysis relating to improvements in the two-dimensional (2D) p-type metal–oxide–semiconductor (PMOS) field …

Jan 24, 2025 · Te-WSe 2 heterojunction photodetector exhibits a high responsivity of 1.3 A/W and a specific detectivity of 1 × 10 10 Jones under the irradiation of 460 nm light source. This study …

Jun 1, 2023 · Our results suggest that the WS 2 /WSe 2 and WSe 2 /WTe 2 heterostructures are possible to make photodetector, and the strain can regulate the electronic and optical …

Mar 1, 2019 · In the present work, we consider electronic properties of WX 2 (X = S, Se) monolayers under a biaxial strain ε b using the first principles study.

Dec 20, 2024 · Here, we report a novel approach, using metallic layered Nb 0.3 W 0.7 Se 2 as a contact for monolayer and bilayer WSe 2 transistors with channel lengths down to 100 nm.

Using a photoemission technique called k-space Photoelectron Emission Microscopy (kPEEM), we measure the electronic band structure of a WSe2 monolayer deposited on these different …

Download scientific diagram | Optical and electronic characterizations of WS2 multi-walled NTs a, Raman spectra of multilayer WS2 NTs grown at ~835–840 °C, compared with those of the …