Novel 4F 2 DRAM cell with Vertical Pillar Transistor(VPT) - IEEE …
Oct 13, 2011 · New 4F 2 cell structure of VPT for the future DRAM devices has been successfully developed by using 30nm process technology. The VPT shows superior current driving capability of 33μA and steep subthreshold slope of 77mV/dec.
Vertical Inner Gate Transistors for 4F 2 DRAM Cell - IEEE Xplore
Feb 7, 2020 · In this article, we propose a novel cell transistor structure to facilitate the mass production of 4F 2 dynamic random access memory (DRAM). 3-D TCAD simulation results show that the proposed structure exhibits a better DRAM operation margin than the conventional vertical transistors.
Vertical Channel Transistor (VCT) as Access Transistor for Future …
In this work, a novel 4F 2 VCT (vertical channel transistor) targeting for next generation of DRAM is proposed. We approached process feasibility and device performance of 4 F 2 VCT by TCAD simulation.
Vertical Inner Gate Transistors for 4F² DRAM Cell
Feb 7, 2020 · New 4F 2 cell structure of VPT for the future DRAM devices has been successfully developed by using 30nm process technology. The VPT shows superior current driving capability of 33uA and...
Novel 4F2 DRAM cell with Vertical Pillar Transistor(VPT)
Sep 1, 2011 · New 4F 2 cell structure of VPT for the future DRAM devices has been successfully developed by using 30nm process technology. The VPT shows superior current driving capability of 33uA and...
A Novel Low Leakage Current VPT (Vertical Pillar Transistor ...
Jun 1, 2006 · In this paper, we present 3-D-DATE, a circuit-level dynamic random access memory (DRAM) area, timing, and energy model that models both the front and back end of 3-D integrated DRAM designs...
Novel 4F2 DRAM cell with Vertical Pillar Transistor(VPT)
Oct 13, 2011 · New 4F2 cell structure of VPT for the future DRAM devices has been successfully developed by using 30nm process technology. The VPT shows superior current driving capability of 33μA and steep subthreshold slope of 77mV/dec.
A Novel Low Leakage Current VPT (Vertical Pillar Transistor ...
Jun 26, 2006 · We propose a BJT-based floating-body 1T-DRAM cell made of a novel heterostructure suitable to low-power DRAM technology. Based on the numerical simulation, we verify that the proposed structure is …
Highly scalable 4F2 cell transistor for future DRAM technology
A novel 4F 2 dynamic random access memory (DRAM) cell transistor structure was proposed that can solve various process problems and special failure modes that caused by floating body. The suitability of the transistor scheme for future DRAM technology nodes was also verified.
A Novel Low Leakage Current VPT (Vertical Pillar Transistor) Integration for 4F2 DRAM Cell Array with sub 40nm Technology”, Technical Digest 64 th Device Research Conference 2006.