Sep 22, 2017 · So it is strictly speaking correct to say that if Vbe is zero, so is Ic (the actual equation holds). If you look at the right hand side of the IV curve, the plot is flat on the x-axis as soon as it crosses zero.

Oct 31, 2017 · Below is an NPN transistor characteristics for Vbe versus Ic at different Vcb or Vce: It seems like in the active region, Vbe vs Ic curves gets steeper with an increasing Vce. The following equations relates Vbe to Ic in detail:

• IC and IE can have either sign, depending on relative magnitudes of VBE and VBC and β F and βR. Both junctions are injecting and collecting. Electrons injected from emitter into base are collected by the collector as in Forward Active case. Electrons injected from collector into the base are collected by the emitter as in Reverse Active case.

Rather, IC is determined by the rate of electron injection from the emitter into the base, i.e., determined by VBE. You may recall from the PN diode theory that the rate of injection is proportional to eqV. These facts are obvious in Fig. 8–1c. Figure 8–2a shows that the emitter is often connected to ground.

Jul 9, 2013 · The absolute value of a VBE at a given current varies based on many factors like doping, current density, temp, etc. But that equation approximates how the VBE changes with current. Reactions: Hans Schulze and #12

Feb 9, 2016 · If a npn transistor is known to be in active mode the following equations will always hold true for it: Vbe, is typically around .7v, but one shouldnt assume so unless you have to. Given Beta and one current nearly any piece of relevant information can be found.

Below 0.7V, the increase of Ice can be somewhat linear and this depends on the transistor. The maximal Ube at the maximal Ice is easily 2.5V to 3V for huge power transistors and Ice's greater than 25A.

In the CE con guration, IB, the input current, and VCE, the output voltage, are the independent variables, whereas the input voltage VBE and the output current IC are the dependent variables. npn devices are most prevalent in both ICs and discrete component circuits which employ BJTs.

Feb 27, 2020 · V BE is the voltage that falls between the base and emitter of a bipolar junction transistor. V BE is approximately 0.7V for a silicon transistor. For a germanium transistor (which is more rare), V BE is approximately 0.3V.

Dec 4, 2014 · Ic与Vbe的关系是非线性的指数函数，很不好分析，不像Ic与Ib是简单的线性关系，当你研究多了以后就知道了，前人走过验证过并最终选择的捷径不会是差的。 当然，带隙基准源的分析设计还是要用到Vbe和Ic的关系的。 三极管实质上是流控电流源。 MOS管是压控电流源。 那几本书不过时。 bjt的性能，明显的不如mos，一般只用在BGR中，而且正在被diode，亚阈值的mos代替。 所以研究的就少了。 就T16工艺而言，bjt的ft只有100MHz左右，beta为0.8左 …