May 1, 2004 · MEMS based micropumps and microvalves are attractive for many applications such as implantable drug delivery, chemical analysis and analytical instruments, etc. TiNi thin films are suitable for building microvalves and pumps.

characterization of the TiNi films for MEMS applications is how to correctly evaluate the shape memory effects and mechanical properties of the constrained thin films on substrates. For this purpose, curvature and electrical resistivity measurements (ER) are widely used. Some new methods based on MEMS testing, such as bulge testing,

Oct 30, 2005 · MEMS hotplates with TiN as a heater material Abstract: Titanium nitride has been investigated as a heater material for hotplates and microreactors. TiN is CMOS compatible, and has a higher melting point (2950 /spl deg/C) than conventional heaters of Pt and poly-Si.

Sep 1, 1998 · In bulk and wire form, TiNi has been applied to a number of applications, and as a thin film, TiNi is an excellent material for use as a microactuator in microelectromechanical systems (MEMS), due to its large recovery forces and high recoverable strains.

Mar 25, 2011 · Here, we report on ultrathin TiN membranes from the back-end-of-line stack and the precise determination of their elastomechanical constants by laser Doppler vibrometry. The availability of such layers from a standard complementary metal-oxide-semiconductor (CMOS) flow enables new and inherently integrated MEMS and BioMEMS devices.

Jan 1, 2004 · Low-stress TiN has been investigated as an IC-compatible material for MEMS hotplate heaters that must operate at high temperatures. The thin films show an increased resistivity and a rather low...

Sep 1, 2012 · A fabrication process of ultrathin TiN micro-electromechanical systems (MEMS) actuators intended for applications in electrostatic actuator schemes is presented. It includes the preparation of the TiN layer from the back end of line (BEOL) module of a 0.25 μm bipolar complementary metal oxide semiconductor (BiCMOS) technology.

innovative titanium nitride composite (TiN-C) structure with high post-process yield in a foundry-oriented CMOS-MEMS platform. The proposed TiN-C resonator shows the lowest TC f of 0.6 ppm/K in CMOS-MEMS technology to date with a well-defined transduction gap of 400nm. The proposed TiN-to-TiN gap provides an attractive feature to eliminate the

Abstract: In this work, a compact monolithic integrated capacitive micromachined ultrasonic transducer (CMUT) receiver front-end is demonstrated based on the titanium nitride composite (TiN-C) CMOS-MEMS platform to attain a small transduction gap of 400nm for efficient electrostatic transduction. The proposed CMUT front-end was designed in a ...

Mar 1, 2016 · A capacitive-type MEMS acoustic sensor with a planarised TiN/plasma-enhanced chemical vapour deposition -Si 3 N 4 /TiN diaphragm based on a polyimide sacrificial layer is presented. The multi-layer diaphragm has the effective residual stress of +31.5 MPa.