Jul 18, 2023 · To overcome this challenge, destructive methods, such as scanning electron microscopy (SEM) and tunneling electron microscopy (TEM), are commonly used to measure the profile of TSV holes for process development and quality control.

Mar 5, 2015 · In this paper, we address important aspects of manufacturing of TSVs and 3D integration using TSVs, including applications, TSV processing, assembly and packaging, design, test, yield, and reliability. Fig. 1. An SEM cross-section image showing 95 …

Jan 5, 2016 · Measurement-based electrical characterization of through silicon via (TSV) and redistribution layer (RDL) is of great importance for both fabrication process and system design of 3D integration. This paper presents the electrical measurements and analysis of TSV and double-sided RDL test structures, from DC to high frequency up to 40 GHz.

The 3D-LSI using through-silicon via (TSV) has the simplest structure and is expected to realize a high-performance, high- functionality, and high-density LSI cube.

Successful and reliable 2.5D and 3D packaging relies on a simple structure to provide the required vertical connectivity needed for stacked chiplets. This structure is the through-silicon via (TSV), a vertical interconnect structure that provides …

Apr 19, 2017 · In this study, we demonstrate the TSV dynamic filling process through staged electrodeposition experiments at different current densities. The optimum current density to achieve defect-free...

TESCAN Xe plasma FIB-SEM systems offer the essential power and speed for performing high-throughput analysis in TSVs. Large area cross-section of a 3D IC showing 5 Cu TSVs and Cu bump contact in silicon. The cross-section was prepared in …

In this paper we propose and demonstrate four bottom CD measurement methods for TSVs: the cross section method, profile analysis method, tomographic image analysis method, and the two-dimensional Gaussian fitting method. To verify and demonstrate these methods, a practical TSV sample with a high aspect ratio of 11.2 is prepared and tested.

In such a high aspect ratio via structure, a bottom-up plating mechanism is applied to ensure a seamless TSV with a reasonably low Cu thickness in the field. The SEM (scanning-electron...

Chip stacking with through-silicon-vias (TSV) technology for 3-D packaging of electronic devices was investigated. A new process of direct solder bumping on Si wafers without photoresist (PR ...