Dec 16, 2024 · In this work, TSV-Cu crystal distribution models with randomly generated grains are constructed by the Voronoi method. The power-law constitutive parameters of TSV-Cu are determined by...

Mar 5, 2015 · In this paper, we address important aspects of manufacturing of TSVs and 3D integration using TSVs, including applications, TSV processing, assembly and packaging, design, test, yield, and reliability. Fig. 1. An SEM cross-section image showing 95 …

Jul 1, 2024 · Designed a novel hollow tungsten through silicon via (W- TSV) with a high aspect ratio (20.3:1) and ultra-low stress. The thermal stress on the silicon substrate is reduced by 60.3% and 68.4% along the axial and radial directions of the TSV, respectively.

Apr 19, 2017 · In this study, we demonstrate the TSV dynamic filling process through staged electrodeposition experiments at different current densities. The optimum current density to achieve defect-free...

May 7, 2019 · Annealing a TSV wafer makes the copper (Cu) TSVs under high stress and may form a protrusion where the Cu is extruded out of the TSV structure. The phenomenon occurs because of the large mismatch in the coefficient of thermal …

As through-silicon vias (TSVs) are key structural elements of 3D integration and packaging, creep deformation, which causes TSV-Cu protrusion, is critical for TSV reliability. Here, the...

This section covers Through-Silicon Via, or TSV, Failure Mechanisms. The first failure mechanism we’ll discuss is copper pumping. This is related to the difference in coefficients of thermal expansion between the silicon die and the copper TSV. Thermal stresses cause the copper to expand, putting upward pressure on the the TSV.

Oct 1, 2018 · Copper film conformality was measured using SEM (Hitachi S-5500) cross section along the 10 μm × 120 μm TSV sidewalls. Via fill using Cu electroplating was observed using FIB (HELIOS) on 10μm×100μm TSV structures.

Here, one widely emerging technique is the three-dimensional (3D) integration based on through-silicon vias (TSVs) and device stacking. A Via Last approach (i.e. TSVs after wafer bonding) could be applied to the cap of a MEMS device or to its active part. Advantageously, the latter method tolerates intermediate layers (e.g. glass frit bonding).

We demonstrate that the proposed M3D-based NoC architecture incorporating VFI-based power management achieves a maximum of 29.4% lower energy-delay-product (EDP) compared to the TSV-based...