Jun 1, 2005 · In this review, we describe the most recent results obtained in atomic scale SiC surface oxidation and initial SiO 2 /SiC interfaces formation, focusing primarily on Si-rich …

Oct 10, 2016 · In this study, the characteristics of SiO 2 films grown on SiC substrates at room temperature for 300 s via direct plasma-assisted oxidation were investigated.

Feb 1, 2021 · Silicon carbide (SiC) devices are now prevalent in the 600 – 1700 V blocking voltage range. A key advantage of SiC is the possibility to form the same native oxide as …

Oct 1, 2022 · In this study, we constructed eight different types of SiC/SiO 2 interfaces and calculated the interface separation work, electronic properties, band alignment, charge …

Jun 17, 2019 · This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs).

Nov 12, 2020 · We found that a SiC/SiO 2 interface with a low interface state density near the conduction band edge of SiC (D it ∼ 4 × 10 10 cm −2 eV −1 at E c −0.2 eV) is obtained for a …

Apr 19, 2018 · A large number of SiO 2 /SiC interface states has been assumed to be the primary cause of poor channel conductivity, because interface states reduce the number of conduction …

Aug 14, 2020 · Our method consists of four steps: (i) H 2 etching of SiC, (ii) Si deposition, (iii) low-temperature (∼750 °C) oxidation of Si to form SiO 2, and (iv) high-temperature (∼1600 °C) N 2 …

High-quality SiC/SiO2 inter-faces were achieved by annealing in NO gas and monatomic H. The key elements that lead to high-quality Si/SiO2 interfaces and low-quality SiC/SiO2 interfaces …

Mar 15, 1996 · The electronic structure of SiC/SiO 2 interfaces was studied for different SiC polytypes (3C, 4H, 6H, 15R) using internal photoemission of electrons from the semiconductor …