Jul 16, 2015 · Electrical isolation of the billion or so active components in each integrated device is achieved using shallow trench isolation (STI) which requires chemical mechanical planarization (CMP) involving silicon dioxide removal at a high rate and …

STI structures represent CMP’s newest and most important application for device-level processing. The mainstream implementation of STI throughout the semiconductor has taken place throughout industry. Currently, STI processing is unavailable …

planarization. Chemical mechanical polishing (CMP) has been accepted in recent years as a critical step in mainstream IC fabrication technology, and has enabled the fabrication of multi-level interconnect up to 5 or 6 metal levels. However, for STI planarization, CMP is “essential,” but typically insufficient by itself in

Jan 1, 2022 · STI CMP is the first CMP process used in semiconductor fabrication. The goal of the STI CMP process is to remove the excess amount of dielectric filled in the shallow trench and to separate two adjacent active device regions by creating dielectric isolation between transistors.

Following capacitor formation is the shallow trench isolation (STI) module. Here, isolation areas are defined by a masking process and a shallow silicon etch is conducted. The depth of the isolation is typically 250–350 nm below the silicon surface.

developing STI CMP processes for new device technologies. Three major STI CMP processes developed on a Mirra® polishing system are discussed. Using patented multi-head and multi-platen architecture with the advanced Titan HeadTM carrier and ISRMTM endpoint detection system, STI CMP has been successfully demonstrated in the volume production of ...

(a) STI CMP The STI CMP process uses a ceria-based slurry for polishing SiO 2 with a high selectivity towards the SiN hardmask covering the fins. A real time in-situ profile control technique SOPM-CLC* significantly improves the resulting within wafer non-uniformity. This is illustrated on figure 3 where the STI field thickness values post CMP are

Apr 1, 2003 · We studied the end point detection (EPD) for the direct CMP of the STI structure without the reverse moat etch process. In this case, we applied a high selectivity slurry (HSS) that improves the silicon oxide removal rate and maximizes the oxide-to-nitride selectivity.

In this paper, development and application of a direct chemical mechanical polishing (CMP) process for shallow trench isolation (STI) on 200mm wafers using high selectivity ceria-based slurry has been studied for production.

Shallow trench isolation (STI) is the mainstream CMOS isolation technology. It uses chemical mechanical polishing (CMP) to re-move excess of deposited oxide and attain a planar surface for suc-cessive process steps.