Using three-dimensional (3-D) process and design simulations, transistor designs are optimized. Then, using an analytical compact model calibrated to the simulated transistor current-vs. …

Oct 28, 2024 · This paper discusses one such improvement where it is shown to be possible to target silicon (Si) devices, their metal contacts, or any other location in the wafer stack in a …

This paper presented examples of the application of FIB/SEM and TEM to bit failure analyses in SRAM arrays. Dual-beam FIB was effective in exposing the abnormal features that were …

Results from these SRAM-specific test structures show good correlation to yield results and in-line SEM observa-tions, and enable us to improve SRAM yields quickly. We have also designed …

Top-down scanning electron microscope (SEM) image of a 6-T FinFET SRAM cell with selective independent gating of the pass-gate transistors. The pull-down and pull-up FinFETs have …

Mar 15, 2017 · The characterization methodology consists of a special test pattern for SRAM fault model categorization and a special test feature for read current measurement of core cells. …

Sep 1, 2006 · For typical SRAM fails - such as SCF (single cell fail), CF (cluster fail), PCF (horizontal and vertical pair cell) and BLF/WLF (bit or word line oriented fail), a complete …

This article describes a 90nm technology SRAM soft fail analysis. The bitmaps of affected wafers show a large number of wafer edge dies failing with single cell cluster fails at supply voltages …

Feb 1, 2011 · We report here analyses of single and multiple bit failures in SRAM arrays carried out using FIB/SEM, and in two cases TEM imaging and EDS/PEELS. Root causes of bit …

A 0.69um2 6T-cell SRAM is demonstrated with functional bit-cells and reliable transistors. The present cell layout is scalable towards cell sizes of 0.6μm2 upon further process enhancement.