Jun 20, 2017 · This study presents a detailed fabrication method, together with validation, discussion, and analysis, for state-of-the-art silicon carbide (SiC) etching of vertical and bevelled structures by ...

Jan 17, 2018 · This paper reports research performed on comparing the etch mask selectivity of two different hard mask material layers, specifically nickel and copper, used for deep, anisotropic plasma etching of Silicon Carbide (SiC) substrates.

Feb 1, 2020 · In this abstract, a novel method of 4H-SiC shallow trench etching process via directly using photoresist as a mask is proposed to fabricate SiC MOSFETs and SiC diodes which enjoy popularity in power devices.

Abstract—This study reports research on Nickel etch mask used for deep plasma etching of silicon carbide (SiC) substrates, aiming to fabricate power integrated devices.

Similar upward trends are observed for the Cr mask etching rate and SiC etching rate with the increase in the ICP power (Figure 15 and Figure 16), which may be related to the increased density of reactive ions in the chamber and, consequently, the increased chemical reactions on etched surfaces.

Deep Reactive Ion Etching (DRIE) of thick 4H-SiC on Insulator (SiCOI) substrates at wafer-level and outlines the progress and challenges. Different size vertical trenches with high aspect-ratios of 15:1 ~ 20:1 and smooth sidewalls were achieved using electroplated nickel mask on 100mm SiC wafer, and a trench depth

Etching mask To realize deep etching in the SiC, it is necessary to get a high selective mask. Three kinds of masks were investigated: photoresist, aluminium and nickel. The conditions in the reactor were an SF 6/O 2 plasma at a work pressure of 8 Pa with an RF power of 250 W. Table 1 gives a summary of the different masks selectivity.

Silicon oxide is used as a hard mask which can withstand the aggressive etch conditions required to etch SiC. Key requirements for the mask open step are high oxide etch rate for productivity, with a vertical profile for accurate profile control of the subsequent SiC trench etch, and minimal loss of the under-lying SiC.

In this paper we present results that show how to control the micromasking phenomenon during local etching of the SiC by choosing an adequate mask that is patterned in order to delimit the areas to be etched. This experimental study should be also helpful for works on micro-nanostructures that need to manage rough surfaces [1].

This study reports research on Nickel etch mask used for deep plasma etching of silicon carbide (SiC) substrates, aiming to fabricate power integrated devices.