Jun 29, 2022 · Our results provide pathfinding of high density, integration capability, low programing voltage (∼2 V), multi-functionality between programmable read-only memory (PROM), and ReRAM co-existing for potential embedded memory applications.

Oct 29, 2022 · Our results provide path nding of high density, integration capability, fi low programing voltage (∼2 V), multi-functionality between pro-grammable read-only memory (PROM), and ReRAM co-existing for potential embedded memory applications.

Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.

CrossBar High-Performance Memory IP cores are ideal as embedded NVM in MCUs for Internet of Things (IoT), wearables, consumer electronics, artificial intelligence, industrial, automotive & medical.

Jan 25, 2023 · In this work, an engineered submicrometer-scale bilayer stacking in via-type one-time programmable (OTP) memory and self-rectified resistive switching memory [resistive random access memory (ReRAM)] is demonstrated.

Aug 7, 2024 · Nuvoton ReRAM MCUs Up to 512KB Power Management NVM Weebit & DBH ReRAM products available for embedded applications… 50 years after the switching effect was discovered 2000s

Apr 11, 2024 · Resistive RAM (ReRAM, also known as RRAM) works by changing the resistance of materials. An electric current is applied to a material, changing the resistance of that material. The resistance state can then be measured. This principle is called ‘memrister’ and relies on the principle of hysteresis.

ReRAM’s high density comes from its unique crossbar architecture where some peripheral circuits are laid below multiple layers of ReRAM cells. A crossbar ar-chitecture introduces special constraints on operating voltages, write latency, and array size.

Jan 16, 2020 · This article reviews the resistive random-access memory (ReRAM) technology initialization back in the 1960s and its heavily focused research and development from the early 2000s. This review goes through various oxygen/oxygen vacancy and metal-ion-based ReRAM devices and their operation mechanisms.

Apr 18, 2019 · After decades of research and development, three new types of memory—magnetic RAM (MRAM), phase change memory (PCRAM) and resistive RAM (ReRAM)—are moving toward commercial adoption, making this an exciting time for the semiconductor and computing industries.