Resistive random access memory (RRAM) devices with Ni/AlOx/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlOx) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments ...

Abstract: Remote quantum point contact (QPC) far from the metal electrodes was observed in forming free aluminum oxide (AlOx)/silicon oxide (SiOx) resistive random access memory (ReRAM) cell, which was resolved at low bias.

May 16, 2023 · The ReRAM devices fabricated using these AlOx films showed reliable resistive switching behavior, which was attributed to the formation of stable conductive filaments in the AlOx (water) layer and the partial connection/interruption of a conductive filament located in the AlOx (ozone) layer.

Jun 1, 2020 · As representative of metal oxide and two-dimensional material, a detailed study and comprehensive comparison in view of resistive switching performance has been conducted for AlOx and GO based RRAM, including operation voltage, resistance distribution, resistance ratio, conduction mechanism and retention/endurance property.

Jul 2, 2019 · Investigations were carried out on the effect of different annealing temperatures for associated RRAM devices to show that performance was correlated with changes of hydroxyl group concentration in the AlO x thin films.

The ReRAM devices fabricated using these AlOx films showed reliable resistive switching behavior, which was attributed to the formation of stable conductive filaments in the AlOx (water)...

Resistance random access memory (ReRAM), as the next-generation memory to succeed flash memory, is being developed using many kinds of transition-metal oxides. 1

Savannah to deposit HfOx/AlOx nanolaminates for RRAM devices, aiming to achieve lower switching power and better switching uniformity and reliability. Oxide immediate breakdown occurs when the current density through the oxide becomes high …

The bottle neck of ReRAM (Resistive RAM) for post-NAND storage application is high operational current. Herein, we report a method to acquire low operational currents from a hetero structure ReRAM (AlOx/TiOx).

Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.