Nov 15, 2019 · In this work, we demonstrate the feasibility of hybrid co-integration of a surface-engineered WSe 2 -based thin film transistor (TFT) and resistive random access memories (ReRAM) to realize a 1...

Panasonic launched a ReRAM evaluation kit in May 2012, based on a tantalum oxide 1T1R (1 transistor – 1 resistor) memory cell architecture. [8] In 2013, Crossbar introduced an ReRAM prototype as a chip about the size of a postage stamp that could store 1 TB of data.

The 1-transistor-1-resistor (1T1R) ReRAM array has density comparable to that of a DRAM array and the advantages of lower programming energy and higher reliability compared to the ultrahigh density ReRAM cross-point array.

两种将RRAM和CMOS电路部分集成的方法：（1）对于1T1R结构，适合用前端（FEOL，front-end-of-line）工艺；（2）对于交叉点阵列结构，适合用后端（BEOL，back-end-of-line）工艺，优势是可以将CMOS电路部分掩于RRAM后面，从而减小芯片面积。

Jan 28, 2022 · This week, Weebit Nano announced that they could successfully sidestep the 1T1R challenges and develop a crossbar (high density) ReRAM array. To avoid the challenges posed by the 1T1R architecture, Weebit Nano instead opted to employ a one selector one resistor (1S1R) architecture.

Oct 1, 2023 · In this paper, we replace the selector in the 1T1R configuration with a capacitor to form a selectorless and passive combination of ReRAM structure.

V-ReRAM, a novel ReRAM crossbar design based on 1TnR cell structure. By reor-ganizing the peripheral circuit, V-ReRAM greatly . educes the number of half-selected cells and thus the sneak leak-age. V-ReRAM further improves RESET performance by exploit.

Oct 1, 2023 · In this paper, we replace the selector in the 1T1R configuration with a capacitor to form a selectorless and passive combination of ReRAM structure. Moreover, we evaluate the merits of the two structures in SkyWater 130nm CMOS technology by comparing the writing technique, power consumption, switching speed, and memory density.

In the 1T1R (1 Transistor per 1 ReRAM cell) array organization, the overall memory size is then dominated by the transistor size. High density, low latency storage class memories need a much denser 1TnR memory array organization in which 1 transistor selects thousands of memory cells.

Apr 11, 2016 · The 1-transistor-1-resistor (1T1R) ReRAM array has density comparable to that of a DRAM array and the advantages of lower programming energy and higher reliability compared to the ReRAM cross-point array. However, 1T1R ReRAM array has significantly lower lifetime compared to a DRAM array.