Wafer Edge Crack Defect Investigation and Improvement in 19nm PSZ DEP …
In 19nm Flash memory process, the aspect ratio of shallow trench isolation (STI) become large and it gets difficult to fill STI Oxide by conventional CVD film.
Wafer Edge Crack Defect Investigation and Improvement in 19nm PSZ DEP …
Mar 14, 2021 · In this paper, the SIFs of the single edge-cracked joints are determined accurately by using the Crack Tip Stress Method. Then, the effects of resin thickness on the SIFs of various edge interface...
Mar 15, 2021 · Wafer Edge Crack Defect Investigation and Improvement in 19nm PSZ DEP Process........49 1-10 Junwei Han, Qiliang Ni, Xiaofang Gu, Jiaya Bo, Jian Li and Pengkai Xu Shanghai Huali Microelectronics Corporation, Shanghai, China
Study of Shallow Trench Isolation Gap Fill for 19nm NAND Flash
Polysilazane (PSZ) curing has been introduced for 19nm NAND Flash to ensure void free Shallow Trench Isolation (STI) gap fill. PSZ film was converted into oxide mainly depending on temperature and water vapor. The high temperature PSZ curing would give rise to …
Improve Chip Side Wall Crack Issue in Nanometer Packing Process …
Dec 3, 2020 · After analyzing the abnormality of nanometer wafer packaging process, this research team found that the chip side wall crack problem was caused by a poor laser waveform during the laser cutting process, resulting in debris along the chip side wall.
Wafer Edge Peeling Defect Mechanism Analysis and Reduction in …
An innovative model of the mechanism for peeling defect in inter metal dielectric(IMD) process induced by poor adhesion between metal and oxide film on wafer bevel is presented. Peeling defect is inspected by dark field inspection (DFI) tool of KLA. Scanning electron microscopy (SEM) and Transmission electron microscope (TEM) are used to study the stack and composition of wafer edge film ...
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19nm PSZ DEPプロセスにおけるウエハエッジ亀裂欠陥の調査と …
透過型電子顕微鏡 (TEM)を用いてウエハエッジ膜のプロファイルを調べた。 実験は,亀裂欠陥が,一般的にSTI Etchプロファイル,上昇のアニーリング温度,およびPSZ DEPの厚さによって決定されることを証明した。 本論文では,亀裂欠陥を避ける解法を研究した。
Wafer Edge Crack Defect Investigation and Improvement in 19nm PSZ DEP …
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Qiliang Ni's research works | Shanghai Huali Microelectronics ...
Wafer Edge Crack Defect Investigation and Improvement in 19nm PSZ DEP Process Conference Paper Mar 2021 Junwei Han Qiliang Ni Xiaofang Gu
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