to−92 (to−226) case 29−11 issue am date 09 mar 2007 styles on page 2 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch.
NPN Bipolar Transistors (PN2222) - 10 pack - Adafruit Industries
Each transistor is a general-purpose amplifier, model PN2222 (same pinout as the 2N3904), and has a standard EBC pinout. They can switch up to 40V at peak currents of 1A (not continuously, just peak!), with a DC gain of about 100. They're basically your garden-variety NPN, and do the job with class! For more details, check the datasheet.
Semiconductor Components Industries, LLC, 2000 November, 2000 – Rev. 0 1 Publication Order Number: PN2222/D PN2222, PN2222A PN2222A is a Preferred Device
PN222 onsemi | Transistors - Digi-Key Electronics
PN222 onsemi Transistors parts available at DigiKey.
General Purpose and Low VCE(sat) Transistors | PN2222 - onsemi
The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications. If you wish to buy products or product samples, please log in to your onsemi account. I C Cont. (A) Loading...
PN2222 Transistor Pinout, Equivalents, Feature, Applications and …
Sep 18, 2022 · PN2222 is a popular transistor NPN bipolar junction transistor (BJT) available in TO-92 package. It is a general purpose transistor and can be used in wide variety of switching and amplification applications.
PN2222A Datasheet(PDF) - NXP Semiconductors
NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: PN2907A. • Low voltage (max. 40 V). • General purpose switching and linear amplification.
See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. fT is defined as the frequency at which |hfe| extrapolates to unity.
PN2222 www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit VCBO Collector−Base Breakdown Voltage IC = 10 A, IE = 0 60 V VCEO Collector−Emitter Breakdown Voltage IC = 10 mA, IB = 0 30 V VEBO Emitter−Base Breakdown Voltage IE = 10 A, IC = 0 5 V ICBO Collector Cut−Off Current VCB = 50 V, IE = 0 0.01 A
PN2222 Datasheet(PDF) - ON Semiconductor
Description: General Purpose Transistors NPN Silicon. Manufacturer: ON Semiconductor.