The TWINSCAN NXE:3600D supports EUV volume production at the 5 and 3 nm Logic nodes and leading-edge DRAM nodes. The TWINSCAN NXE:3600D combines imaging and overlay improvements with a 15% to 20% productivity improvement capability when compared to its predecessor, the NXE:3400C at dose 30mJ/cm2.

In order to reduce the gap of inter-site CG variability, collaborative work is done in between EIDEC, NIST, Sematech, and imec under advice of ASML (reported in detail on recent IEUVI resist TWG meeting), and 3 main root causes of variability have been identified. Stability in time is key, and site-to-site matching needs to be checked.

Jun 19, 2019 · The following paragraph describe main parts of a typical LPP system in a market-available ASML NXE 3x00 EUV system.

Continuous resist improvement for Hex. Pillars/CH. Proven resol. All resist suppliers!

Resist B and C have largest process windows, but Resist C has a lower dose to size. Resist A is still has the best sensitivity - LCDU compromise. DEV recipe Sensitive! Yuhei Kuwahara, Koichi Matsunaga, Kathleen Nafus, Takeshi Shimoaoki and service team.

Although ASML NXE EUVL scanner is the only commercialized EUV exposure system available on the market, its development is the concentration of all essence from worldwide industrial and academic collaboration.

asML euV nXe:3X00 tooLs the resist has to Be quaLified on outgassing. so caLLed non-cLeanaBLe contaMination is of particuLar concern. after a witness saMpLe has Been eXposed to a resist outgassing enVironMent the grown carBon Layer is quantified By eLLipsoMetry. then the saMpLe has to Be cLeaned By atoMic hydrogen to enaBLe

AIMS™ EUV was designed to perform the full emulation of the scanner imaging of the mask onto the wafer (CCD camera on AIMS™): the scanner generations targeted are the NXE:3100 and NXE:3x00, with NA settings from 0.25 up to 0.33.

Mar 19, 2024 · The heightened precision of the Twinscan NXE:3800E holds promise for driving advancements in chip manufacturing processes below 3nm, enhancing the efficacy of 2nm chip production, and refining double exposure manufacturing techniques.

Combining high productivity, excellent image resolution, matched overlay to EUV NXE and ArFi NXT tools and focus performance, the TWINSCAN NXE:3400C provides lithography capability complementary to ASML’s ArFi technology.