NXE lithography systems are used in high-volume manufacturing of advanced Logic and Memory chips. The first systems to use ASML’s novel 13.5 nm EUV light source, they print microchip features with a resolution of 13 nm, which is unreachable with deep ultraviolet (DUV) lithography.

Combining high productivity, excellent image resolution, matched overlay to EUV NXE and ArFi NXT tools and focus performance, the TWINSCAN NXE:3400C provides lithography capability …

Jul 30, 2014 · ASML confirms reports that one customer has exposed more than 500 wafers on an NXE:3300B EUV lithography system within 24 hours.

The TWINSCAN NXE:3600D combines imaging and overlay improvements with a 15% to 20% productivity improvement capability when compared to its predecessor, the NXE:3400C at …

The TWINSCAN NXE:3400B Step & Scan system includes Zeiss 4x reduction EUV optics with a Numerical Aperture (NA) of 0.33 and a maximum scanned exposure field size of 26 x 33 mm.

The NXE:3800E is designed to cost-efficiently support volume production of 2 nm Logic nodes and leading-edge DRAM nodes. Its patterning capabilities are complementary to those provided by our immersion lithography systems. A new bottom module was key to boosting productivity in the NXE:3800E.

We shipped the second generation EUV system (NXE:3300) that year, with the third generation EUV system (NXE:3350) following in 2015. EUV lithography turned the corner in 2016, when customers began ordering our first production-ready system NXE:3400 in batches.

Mar 30, 2022 · We shipped six more systems to different customers in Asia and the US, and in 2013, we shipped the first EUV production system – the TWINSCAN NXE:3300 – signaling another step forward in the development of this new technology.

Sep 14, 2010 · Brion's new Tachyon NXE provides accurate predictive modeling specifically for ASML extreme ultraviolet (EUV) scanners, the upcoming technology for the chip industry which will enable smaller, faster, cheaper and more energy-efficient semiconductors.

Oct 12, 2011 · Imaging performance of the NXE:3100 has been demonstrated with enhancement technology down to 22 nanometer in a single exposure. During the quarter customers almost doubled the number of exposed wafers on NXE:3100 systems, to a total of more than 2,500 wafers, allowing them to develop next generation chip production processes.