Sep 12, 2022 · In circuit design, we refer to a “ cascode” as a cascade of two MOS devices stacked vertically. It is very common to see cascoded structures in analog circuits, where the main goal of cascoding is to increase the output resistance, and in the end, increase the gain.

Aug 6, 2002 · In this paper, we investigate layout and bias options for maximizing the lateral NPN bipolar trigger voltage V/sub t1/ of the cascoded NMOSFET output buffer.

Nov 1, 2015 · An N-over-N cascode push–pull amplifier is used in this design. Unlike conventional push–pull amplifiers , an NMOS source follower replaces a conventional PMOS common source amplifier on the top branch of the circuit. This modification provides an enhanced bandwidth of the amplifier at the cost of slightly decreasing the output voltage swing.

Similar to its bipolar counterpart, MOS cascode can be thought of as stacking a transistor on top of a current source. Unlike bipolar cascode, the output by . Parasitic Resistance. Since the output impedance of bipolar cascode is higher than that of the CE stage, we would expect its voltage gain to be higher as well.

Mar 1, 2002 · In this paper, we propose an electrostatic discharge (ESD) solution with cascode structure for deep-submicron integrated circuits technology to enhance its ESD robustness.

Nov 1, 1999 · We demonstrate that NMOS transistors stacked in a cascode configuration provide robust ESD protection for mixed voltage I / O in both silicided and silicide-blocked technologies. Circuits for gate voltage modulation were added to ensure uniform finger …

We demonstrate that NMOS transistors stacked in a cascode configuration provide robust ESD protection for mixed voltage I/O in both silicided and silicide-blocked technologies. Circuits for gate voltage modulation were added to ensure uniform finger triggering of …

ESD designers can use pick-up insertion architecture for NMOS transistors in the low-end processes, but utilize the non-pick-up insertion architecture for GGNMOST in the high-end processes. Then they can obtain the optimized ESD performances. 1. Introduction.

Dec 12, 2007 · The failure voltage of cascoded drivers in IO cells is influenced most by the bottom NMOS. The failure voltage improves if the gate is tied to ground. A solution with only one additional transistor to increase the failure voltage of a level-shifter circuit with cascoded NMOS drivers is presented.

(b) Calculate the voltage swing of this folded cascode. Both npn and pnp transistors have a turn-on voltage of Vbe,on and a saturation voltage of Vce,sat. Assume the current at the emitter of the NPN is selected to maximize output swing. Figure 2: An inverter. 2.