In this tutorial you will learn how to use the MagneticAnisotropyEnergy study object to calculate the perpendicular magnetic anisotropy (PMA) energy of a Fe-MgO-Fe magnetic tunnel junction (MTJ) structure.

Oct 31, 2004 · Here, we report a giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs. The origin of this enormous TMR effect is coherent spin-polarized tunnelling, where the...

This tutorial shows you how to simulate and analyze the electronic transport properties of magnetic tunnel junctions (MTJs), commonly studied for spintronic applications. You will consider a Fe|MgO|Fe MTJ, which is a rather complex spin polarized system, initially studied by MacLaren and co-workers [1].

Apr 19, 2024 · Our work experimentally realizes nonvolatile electric-field control of p-MTJ in FM/FE multiferroic heterostructure, which represents an essential step toward spintronic devices with high density and ultralow energy consumption.

Apr 5, 2024 · Integrating ferroelectrics (FEs) and MTJs to realize electric field “writing” operation has become an important approach for energy-efficient spintronics. There are some reports using FE or multiferroic materials as the insulating layer of MTJs (29 – 32).

Jan 1, 2019 · Thus to understand the phenomena of MTJ fabrication, we first describe the procedure for Fe/MgO/Fe/Au MTJ using chemical etching and e-beam lithography. The Fe/MgO/Fe MTJ is selected as it is the simple system and will provide the detailed information of this lithography procedure.

Feb 27, 2025 · Magnetic Tunnel Junction (MTJ) based Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is poised to replace embedded Flash for advanced applications such as automotive microcontroller units.

Jan 19, 2022 · We report large tunnel magnetoresistance (TMR) ratios up to 429% at room temperature (RT) and 1034% at 10 K in a Fe/Mg-rich spinel/Fe (001) MTJ prepared using electron-beam evaporation of Mg 4 Al-O x.

Mar 7, 2024 · Here, we report the observation of highly tunable room-temperature tunneling magnetoresistance through electronic means in a full vdW Fe 3 GaTe 2 /WSe 2 /Fe 3 GaTe 2 MTJ. The spin valve effect of the MTJ can be detected even with the current below 1 nA, both at low and room temperatures, yielding a tunneling magnetoresistance (TMR) of 340% at 2 ...

In this study, we revisited the simplest "Fe/MgO/Fe(001)" MTJ to obtain much larger TMR ratios by careful tuning of growth conditions for all the layers, combining sputtering and electron-beam evaporation, and MgO barrier interface modifications [5] .