Jul 9, 2014 · 2 ˜˜˜" " 3415 ’˘ + ˆ ( 6˘ *7#3415 Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10a. Switching Time Test Circuit
LR120N-VB Datasheet 1 N-Channel 100 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET † 150 °C Junction Temperature † PWM Optimized † 100 % Rg Tested † Compliant to RoHS Directive 2002/95/EC APPLICATIONS † Primary Side Switch 100 PRODUCT SUMMARY VDS (V) RDS(on) ( )ID (A) 0. at VGS = 10 V N-Channel MOSFET G D S Notes: a.
IRLR120N Datasheet(PDF) - International Rectifier
Part #: IRLR120N. Download. File Size: 173Kbytes. Page: 10 Pages. Description: Power MOSFET (Vdss=100V, Rds (on)=0.185ohm, Id=10A). Manufacturer: International Rectifier.
IRLR120N - Infineon Technologies
100V Single N-Channel IR MOSFET in a D-Pak package.
LR120N Datasheet, PDF - Alldatasheet
Description: HEXFET Power MOSFET. 12 Results. Part #: AUIRLR120NTRL. Datasheet: 450Kb/10P. Manufacturer: Infineon Technologies AG.
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
LR120N IR Transistors - Veswin Electronics
Jul 31, 2020 · Q: LR120N Technical Support? A: Yes, Our product technical engineer will help you with the LR120N pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.
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LR120N Thyristors - ExcessChip Technology
To ensure you have all the necessary information to fully utilize this component, Excesschip offers a free PDF datasheet for LR120N Thyristors, as well as pin layout, detailed pin information, pin rated voltage, and equivalent components for LR120N Thyristors.
LR120N-VB_VBsemi (微碧半导体)_LR120N-VB中文资料_PDF手册_ …
LR120N-VB由VBsemi(微碧半导体)设计生产，立创商城现货销售，正品保证，参考价格￥1.55，封装为TO-252。商城还提供LR120N-VB专业中文资料、详细参数、引脚图、PCB焊盘图，典型应用图，Datasheet数据手册等资料查询和免费下载。
LR120NDatasheet, PDF - Alldatasheet
Description: HEXFET Power MOSFET. 6 Results. Datasheet: 450Kb/10P. Manufacturer: Infineon Technologies AG.
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