Voltage drop induced by an electrical dipole layer after the incorporation of La or Al in high-k/metal gate-stack has been measured on nominal and beveled-SiOx devices and linearly correlated to the effective La/Al dose into the high-k/SiOx stack determined through X …

Jan 30, 2023 · La dipole at the interface between high-k and semiconductor substrate induces negative V FB shift. Al dipole forms at the HfO 2 and Ge substrate, leading to positive V FB shift. Dipole formation is an efficient way to modulate V FB for both Si and Ge devices.

Therefore, we investigated the temperature-dependent La- and Al-induced dipole behavior from room temperature up to 900 °C by monitoring the band bending in the Si substrate using femtosecond...

Apr 30, 2015 · We infer that La diffusion generates an internal electrical field at the La-silicate interface between HfSiON and SiON, and that its strength increases with the increase of LaO x thickness. These findings support the band alignment model based on a …

Abstract: In this article, an in situ La-dipole technique with atomic-scale atomic layer deposition (ALD) La2O3 in laminated high- k dielectric stacks is presented, where the large flat-band voltage ( VFB ) modulation range is observed.

Mar 27, 2019 · An interface dipole moment model has been proposed by P. D. Kirsch et al. through a study of V th shift for nFETs with rare-earth element (La, Sr, Er, and Sc)-doped HfO 2 . Similarly, the dipole vector formed by incorporating rare-earth oxides could induce a shift in EWF, resulting in the V th tuning of MOS devices.

Among the various technologies to tackle these problems, interface dipole engineering (IDE) is an effective method to improve the performance, particularly, modulating the effective work function (EWF) of metal gates.

Mar 2, 2017 · We demonstrated that a flat band voltage (VFB) shift could be controlled in TiN/ (LaO or ZrO)/SiO 2 stack structures. The V FB shift described in term of metal diffusion into the TiN film and...

In this paper, for the first time, we have realized record 7 (N)+7 (P) multiple threshold voltages (Multi-V T s) on horizontal gate-all-around (GAA) Si nanosheet (SiNS) n/pFETs using work-function-metal-less (WFM-less) direct interfacial La/Al-dipole technique, regardless of the sheet-to-sheet spacing (T sus) pinch-off in stacked channels.

Mar 29, 2010 · When La and Al atoms coexist on a SiO 2 surface, the La-induced dipole becomes dominative after a silicate-forming reaction at the temperature above 600 ° C ⁠. This phenomenon is attributed to the different natures of the La- and Al …