Sep 1, 2022 · Historically, both theoretical studies and experiments have clearly indicated that the CO2 laser-produced plasma (LPP) system is a promising solution for EUVL source, able to realize high conversion efficiency (CE) and output power.

Sep 25, 2020 · High power laser interacts with liquid tin producing a plasma. Plasma is heated to high temperatures creating EUV radiation. Radiation is collected and used to pattern wafers. Over 10 independent variables can affect Target formation, giving a …

Laser produced plasma (LPP) systems have been developed as the primary approach for use in EUV scanner light sources for optical imaging of circuit features at 20nm nodes and beyond. This paper provides a review of development progress and productization status for LPP

Improved energy stability due to increased droplet stability and added control features. Closed loop energy control is not applied yet. directions monitor the shot-to-shot angular distribution of EUV emission. The average emission distribution is …

Plasma conditions for high CE are almost the same for LPP and LA-DPP, although their dynamics are quite different from each other, ion number density: about 10 18 cm -3 , electron temperature: 40 – 50 eV.

They are measured in the illuminator work center, using visible light and a camera on top of the illuminator. Ion density ~ 1017 – 1018 #/cm3. Temperature ~ 30 -100 eV. for the full duration of the Main pulse. Results include temperature, electron density, spectral emission, etc.

Plasma conditions for high CE are almost the same for LPP and LA-DPP, although their dynamics are quite different from each other, ion number density: about 5x10. 17. cm-3, electron temperature: 40 eV. CE of 4 – 6 % in LPP. spectral efficiency > 25 % in LA-DPP. Those plasma conditions can be achieved by . double laser pulse scheme with CO. 2 ...

This paper describes the development of laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source architecture for advanced lithography applications in high volume manufacturing. EUV lithography is expected to succeed 193 nm immersion technology for sub-22 nm critical layer patterning. In this paper we

We found out Tin + CO2 laser could be around 8% efficiency through Leading project & EUVA. 1. High ionization rate and CE EUV tin (Sn) plasma generated by dual-wavelength shooting via CO2 and pre-pulse solid-state lasers. 2. Hybrid CO2 laser system with short pulse high repetition rate oscillator and commercial cw-amplifiers. 3.

Advantages of fast rotating liquid metal LPP target. For full-band (13.5nm ±2%) conversion efficiency is 4%@2π, giving double brightness and double the collected EUV power. Debris types: droplets and plasma/vapor. The number of droplets and their sizes were calculated from the SEM images of the Si witness samples.