Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

55V Single N-Channel Power MOSFET in a TO-220 package.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

View IRF3205 by Infineon Technologies datasheet for technical specifications, dimensions and more at DigiKey.

Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Max. Breakdown Voltage Temp. Coefficient. Max. p-n junction diode. Fig 1.

IRF3205PBF – N-Channel 55 V 110A (Tc) 200W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

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Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Jan 6, 2019 · The IRF3205 is a high current N-Channel MOSFET that can switch currents upto 110A and 55V. The specialty of the MOSFET is that it has very low on resistance of only …

IRF3205 is manufactured by International Rectifier (now a part of Infineon Technologies), also prefix in the part number indicates the same. Extremely low on-resistance per silicon area, combined with the fast switching speed and high grade device design that HEXFET power MOSFETs are well known.