Indium gallium nitride (InGaN, In x Ga 1−x N) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III / group V direct bandgap …

Jan 1, 2008 · Although InGaN material has long been used as an active material for the fabrication of optoelectronic devices, the emission mechanism still remains an enigma: …

Jan 26, 2025 · We believe this review will deepen the understanding of micro-LED sidewall effects and provide a better insight into the latest associated fabrication technologies for high-efficient …

Jul 8, 2023 · InGaN with its direct energy bandgap tunable from 3.4 eV down to 0.7 eV upon increase of the In content is the ideal semiconductor material for light-emitting devices in the …

Aug 3, 2022 · Using a sol–gel passivation method, the fabrication of blue InGaN nanorod-LEDs with the highest external quantum efficiency value ever reported for LEDs in the nanoscale is …

Oct 10, 2022 · InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering

Jan 21, 2014 · The mixture of gallium nitride (GaN) and indium nitride (InN) to form indium gallium nitride (InGaN) has become one of the more popular technologies for making LEDs, …

May 15, 2013 · This paper reports the synthesis of InGaN nanoparticle at 90 °C temperature and under ambient pressure using a chemical method. The process is highly suitable for large …

and electrical quality p-type InGaN is highly sought after. For hydrogen generation, p-type InGaN alloys are expected to be more stable in aqueous solutions than n-type materials.

Sep 14, 2019 · An Indium-rich InGaN/GaN p-i-n thin film solar cell which incorporates a dual nanograting (NG) structure—Ag-NGs on the back side and GaN-NGs on the front side of the …