PMOS Transistor: Current Flow y 0 y L Gate ID W QP y vy y Current in the inversion channel at the location y is: Note: positive direction of current is when the current flows from the drain to the source ID ID VGS VDS VSB + +-QP y Inversion layer charge (C/cm2) vy y Drift velocity of inversion layer charge (cm/s)

The linear region voltage-current relation is given as follows: Id (Linear) = µ Cox W/L (Vgs – Vth – Vds/2) Vds. Similarly, for P-MOS transistor, condition for P-MOS to be in linear region is represented as: VGS < Vth OR VSG > |Vth|. And VDS > VGS + Vth OR VSD < VSG - |Vth|.

DERIVATION OF MOSFET I DS VS. V DS + V GS 3 I D= J nW(W=Device Width) J n for channel is Amp/cm since Q m= Charge=cm2 I D for Linear Region: I D= C ox W L [(V GS V TH)V DS V2 DS 2] 2. Saturation Region When V DS (V GS V TH) channel pinches o .This means that the channel current near the drain spreads out and the channel near drain can be approximated

Will iD increase or decrease with temperature? What is the effective resistance of the transistor in the triode region? Select the R’s so that the gate voltage is 4V, the drain voltage is 4V and the current is 1mA.

We can now relate these values using our PMOS drain current equation. Recall that we ASSUMED saturation, so if this assumption is correct: Be careful here! Note in the above equation that threshold voltage Vt is negative (since PMOS) and that ID and K …

To make current flow, we need to create a hole inversion layer. substrate. In the substrate, there are lots of electrons (majority carriers), and relatively few holes (minority carriers). Apply a positive voltage to the gate – electron accumulation. Apply a (smallish) negative voltage to the gate.

In order to obtain the relationship between the drain to source current (I DS) and its terminal voltages we divide characteristics in two regions of operation i.e. linear region and saturation region.

Specifically, we express the drain current iD in terms of vGS and vDS for each of the three MOSFET modes (i.e., Cutoff, Triode, Saturation). between each of these three modes! But first, we need to examine some fundamental physical parameters that describe a MOSFET device. These parameters include:

ID = 0 • Triode: (VGS ≥ VTn and VDS ≤ VGS - VTn) • CLM term added to ensure continuous curve for ID vs. VDS • Saturation: (VGS ≥ VTn and VDS ≥ VGS - VTn). B. Backgate Effect • The threshold voltage is a function of the bulk-to-source voltage • where V TOn is the threshold voltage with V BS = 0 • γ n is the backgate effect ...

iD for PMOS [text {i}_ {text {D}}=text {K}_ {text {p}}^ {prime}left (frac {W} {L}right)left [left (text {V}_ {text {GS}}-text {V}_ {text {t}}right)^ {2}-frac {1} {2} text {V}_ {text {DS}}^ {2}right]] Instructions to use calculator Enter the scientific value in exponent format, for example if you have value as 0.0000012 you can enter this as 1.2e...