His brainstorm planted the seed for the invention of dynamic random-access memory, or DRAM, the semiconductor-based memory architecture used by the majority of today’s computers, servers and consumer electronics, including mobile phones, game consoles and digital cameras.

Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology.

The insight was the catalyst for DRAM — Dennard’s most important innovation. [3] In 1966 he invented the one transistor memory cell consisting of a transistor and a capacitor for which a patent was issued in 1968. [4] It became the basis for today's dynamic random-access memory (DRAM) and almost all other memory types such as SRAM and FLASH ...

Sep 3, 2024 · Modern DRAM is made possible by two separate and complementary inventions: the 1T1C memory cell, and the sense amplifier. The 1T1C cell was invented in 1967 at IBM by Dr. Robert Dennard, also well known for his eponymous MOS transistor scaling law.

Jun 13, 2018 · In 1967, IBM filed for a patent on my single-transistor dynamic random access memory, which became known as DRAM. The patent (Fig. 1) was issued in 1968. In 1970, Intel built the first...

Dynamic Random Access Memory (DRAM) devices are used in a wide range of electronics applications. Although they are produced in many sizes and sold in a variety of packages, their overall operation is essentially the same. DRAMs are designed for …

It was the first step toward what would become his crowning achievement: the invention of dynamic random-access memory, better known as DRAM, the revolutionary memory cell inside nearly every computer, server and consumer electronic device on the market today.

Jun 10, 2024 · In 1966, Dennard cemented his place in history when he and his colleagues at IBM Research invented dynamic random-access memory (DRAM), the chip that changed the world by shrinking memory storage while boosting its capacity. …

Jan 31, 1995 · The original substrate plate trench cell used in the 4Mb chip is still the basis of the 256Mb technology being developed today. This paper describes some of the more important and interesting innovations introduced in IBM CMOS DRAMs.

In 1966 American electrical engineer and inventor Robert H. Dennard of IBM invented Dynamic Random Access Memory cells— one-transistor memory cells that stored each single bit of information as an electrical charge in an electronic circuit. DRAM technology permitted major increases in memory density.