Apr 13, 2021 · (34) Local analysis by transmission electron microscopy (TEM) revealed a lateral size of the crystallites of around 10 nm and that grain boundaries were along {100} or {110} planes.

Jan 25, 2021 · Here, we demonstrate metastable o -FE phase and ferroelectricity at room temperature in bulk HfO 2:Y single crystals, which are grown using a state-of-the-art laser-diode-heated floating zone...

In this study, the method of low-temperature atomic layer deposition (ALD), which is applied on the soft photo-resist (PR) substrate forming hafnium dioxide (HfO2) at 40°C to 85°C, is reported for the first time. This reveals the potential application in the TEM sample preparation. The thickness, refractive index, band gap, and depth profiling chemical state of …

ied on the soft photo-resist (PR) substrate forming hafnium dioxide ( fO2) at 40oC to 85oC, is reported for the first time. This reveals the potential application in the TEM sample preparation. The thickness, refractive index, band gap, and depth profiling c.

Jun 27, 2022 · Here we demonstrate that stable and enhanced polarization can be achieved in epitaxial HfO2 films with a high degree of structural order (crystallinity).

Jul 1, 2018 · a) The TEM cross section image of HfO2 thin film with 150 ALD cycles on photo-resist contained substrate. (b) The composite EDX element mapping of the TEM sample.

Jul 15, 2022 · Phase transition of HfO 2 thin film has been investigated to demonstrate desirable electrical properties, such as high dielectric constant or ferroelectricity, however, the most of results exhibited a limitation on enhancing the crystallinity because of employing dopant.

Mar 30, 2022 · In this Review, we discuss in depth the properties and origin of ferroelectricity in HfO 2 -based materials, carefully evaluating numerous reports in the field, which are sometimes...

Jul 31, 2008 · A transmission electron microscopy (TEM) methodology is developed and applied to quantify the ALD conformality in the nanopores (thickness as a function of depth), and the results are compared to existing models for ALD conformality.

Nov 1, 2023 · In this paper, HfO 2 thin films were deposited by ALD process using a novel precursor modified with a cyclopentadienyl-based ligand to improve thermal stability, and the improved properties were investigated. The ALD process window has been extended to …