Hafnium dioxide is an intermediate in some processes that give hafnium metal. Hafnium (IV) oxide is quite inert. It reacts with strong acids such as concentrated sulfuric acid and with strong bases. It dissolves slowly in hydrofluoric acid to give fluorohafnate anions.

Hafnium oxide is the inorganic compound of the formula HfO2. Also known as hafnia, this colorless solid is one of the most common and stable compounds of hafnium. It is an electrical isolator with a bandgap of 5.3 ~ 5.7 eV. Hafnium dioxide is an intermediate in some processes that give hafnium metal.

Hafnium oxide (HfO 2) is one of the mature high-k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices.

Feb 18, 2025 · Combining group theory and first-principles calculations, we identify numerous unconventional electric polarization switching pathways in HfO 2 with energy barriers of 0.32 to 0.57 eV as a function of the different shift in the suboxygen lattices.

Mar 30, 2022 · In this Review, we discuss in depth the properties and origin of ferroelectricity in HfO 2 -based materials, carefully evaluating numerous reports in the field, which are sometimes...

Hafnium oxide (HfO2) | HfO2 | CID 292779 - structure, chemical names, physical and chemical properties, classification, patents, literature, biological activities, safety/hazards/toxicity information, supplier lists, and more.

Apr 22, 2020 · Here we report ferroelectricity in ultrathin doped hafnium oxide (HfO 2), a fluorite-structure oxide grown by atomic layer deposition on silicon. We demonstrate the persistence of inversion...

Jan 1, 2019 · Understanding the mechanisms underpinning these functionalities requires a basic understanding of the HfO2 crystal structures and HfO 2-metal oxide phase equilibria. This chapter reviews these fundamentals, including a discussion on …

HfO2 is Baddeleyite structured and crystallizes in the monoclinic P2_1/c space group. The structure is three-dimensional. Hf4+ is bonded to seven O2- atoms to form a mixture of distorted corner and edge-sharing HfO7 pentagonal bipyramids.

Sep 3, 2024 · HfO 2 -based ferroelectrics have emerged as promising materials for advanced nanoelectronics, with their robust polarization and silicon compatibility making them ideal for high-density, non-volatile memory applications.