GeSbTe (germanium-antimony-tellurium or GST) is a phase-change material from the group of chalcogenide glasses used in rewritable optical discs and phase-change memory applications. …

Feb 22, 2018 · Here we employ photoelectron spectroscopy to map the relevant bands for metastable, epitaxial GeSbTe films. The constant energy surfaces of the valence band close …

Dec 20, 2016 · Gas-phase condensation based on magnetron sputtering offers an attractive and straightforward solution to continuously down-scale the PCMs into sub-lithographic sizes.

Therefore, we present here an innovative exploration of the crystallization kinetics of Ge 2 Sb 2 Te 5 (GST) nanoparticles (NPs) exploiting differential scanning calorimetry with ultrafast heating …

Jun 25, 2024 · Among phase change materials, Ge-rich GeSbTe alloys (GGST) are key alloys for the next generation of embedded phase change memories because of their good thermal …

Among the phase-change materials, Ge-rich GeSbTe (GST) alloys are of considerable interest as they offer a much higher thermal stability than their congruent contenders, a desirable …

Mar 1, 2022 · In this paper, we present the structural analyses of as-deposited and annealed Ge-rich GeSbTe, considering the Ge enrichment (15–55 at.%) of reference Ge2 Sb 2 Te 5 alloy.

Oct 1, 2012 · Discovery of the GeSbTe phase-change alloy in particular along the GeTe–Sb 2 Te 3 tie-line took place in the mid-1980s. The amorphous alloys showed ideal properties, for …

Aug 2, 2021 · In this work, we have developed crossbar phase-change memory arrays through the electrodeposition of GeSbTe (GST). We show that GST can be electrodeposited in …

Feb 14, 2022 · In this paper, we have studied the stability and the electrical properties of Ge-rich GeSbTe alloys belonging to the Ge-Sb 2 Te 3 and Ge-Ge 2 Sb 2 Te 5 lines. The Ge-rich …