Mar 1, 2024 · In this study, we conducted high-energy resolution EELS (HR-EELS) measurements with an energy resolution of less than 100 meV to detect the mid-gap states of GaN. Various defects were intentionally induced through Ga-ion implantation, and the defect concentration varied in the depth direction.

Oct 20, 2024 · In this study, we characterized vibrational modes of PSF in GaN using scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS).

Nov 30, 2024 · At on-axis geometry, we found that buckled 2D GaN exhibits three dominant EELS peaks at ~40, 70, and 110 meV. In comparison, bulk GaN shows EELS peaks at ~20, 40, and 80 meV.

Mar 1, 2003 · We present results of electron energy loss spectroscopy (EELS), carried out with nanometer spatial resolution in a dedicated scanning transmission electron microscope (STEM), of thin films of GaN and diamond.

Jul 22, 2023 · Our momentum-resolved EELS work was focused on the AlN/GaN interface. We conducted phonon dispersion measurements across the interface, selecting phonon scattering along the ΓM direction of the wurtzite Brillouin zone.

Aug 15, 1999 · Bare and hydrogenated GaN(0001) were characterized using electron-energy-loss spectroscopy (EELS), Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED). AES and LEED show that the GaN surface is clean but faceted.

Apr 1, 2021 · In this paper, the microstructures of GaN nanorods with Zn doping was studied by TEM, and the electronic structures of GaN and GaN:Zn were researched by EELS and first-principles calculations. The bright field images of TEM manifested that the surface of the nanorods of GaN:Zn was rough.

Our results refer to EELs with optimized structures with respect to the lowest possible threshold current densities. Such optimization of EEL with plasmonic GaN of fixed thickness and free carrier concentration requires estimation of the ITO and n-GaN spacer thicknesses.

Jul 2, 2020 · GaN is a direct gap semiconductor with a bandgap at ∼ 3.4 eV. When alloyed with in and/or Al the bandgap can be tuned to any wavelength ranging from UV to red. to further the development of GaN based devices, reliable methods are required to measure and predict the optical and electronic properties.

Methods. probe-corrected ARM 200F TEM/STEM microscope C-FEG emission gun GIF Quantum ® ER system voltage: 200 kV d ata taken in STEM mode EELS core-loss spectrum (200 – 2200 eV) exposure time: 10 ms